Mobility analysis of surface roughness scattering in FinFET devices

This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones.

[1]  D. E. Burk,et al.  MOSFET electron inversion layer mobilities-a physically based semi-empirical model for a wide temperature range , 1989 .

[2]  V. Kilchytska,et al.  Carrier Mobility in Undoped Triple-Gate FinFET Structures and Limitations of Its Description in Terms of Top and Sidewall Channel Mobilities , 2008, IEEE Transactions on Electron Devices.

[3]  T. Ouisse,et al.  Relationship between empirical and theoretical mobility models in silicon inversion layers , 1996 .

[4]  Hiromi Yamauchi,et al.  Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching , 2005 .

[5]  Chenming Hu,et al.  Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era , 2002 .

[6]  Hongliang Lu,et al.  Physically based model for trapping and self-heating effects in 4H-SiC MESFETs , 2008 .

[7]  F. Balestra.  Nanoscale CMOS: Innovative Materials, Modeling and Characterization , 2010 .

[8]  F. Klaassen,et al.  On the temperature coefficient of the MOSFET threshold voltage , 1986 .

[9]  Eddy Simoen,et al.  Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs , 2008 .

[10]  E. Simoen,et al.  On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric , 2009 .

[11]  F. Gámiz,et al.  Scattering of electrons in silicon inversion layers by remote surface roughness , 2003 .

[12]  D. Flandre,et al.  A Simple Method for Measuring Si-Fin Sidewall Roughness by AFM , 2009, IEEE Transactions on Nanotechnology.

[13]  O. Faynot,et al.  A simple parameter extraction method for ultra-thin oxide MOSFETs , 1995 .

[14]  Gerard Ghibaudo,et al.  DC and low frequency noise characterization of FinFET devices , 2009 .

[15]  S. Takagi,et al.  On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration , 1994 .

[16]  Chenming Hu,et al.  50-Å gate-Oxide MOSFET's at 77 K , 1987, IEEE Transactions on Electron Devices.

[17]  K. De Meyer,et al.  Extraction of the Top and Sidewall Mobility in FinFETs and the Impact of Fin-Patterning Processes and Gate Dielectrics on Mobility , 2007, IEEE Transactions on Electron Devices.

[18]  T. Hiramoto,et al.  Temperature Dependence of Off-Current in Bulk and Fully Depleted SOI MOSFETs , 2005 .

[19]  Jean-Pierre Colinge,et al.  Multi-gate SOI MOSFETs , 2007 .

[20]  O. Gluschenkov,et al.  Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics , 2003, IEEE Electron Device Letters.

[21]  Kenneth E. Goodson,et al.  Measurement and modeling of self-heating in SOI nMOSFET's , 1994 .

[22]  M. Vinet,et al.  Bonded planar double-metal-gate NMOS transistors down to 10 nm , 2005, IEEE Electron Device Letters.

[23]  H. Iwai,et al.  Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric , 2003 .

[24]  A. Pirovano,et al.  Explaining the dependences of the hole and electron mobilities in Si inversion layers , 2000 .

[25]  Hisashi Hara,et al.  Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces , 1971 .

[26]  J. Bokor,et al.  Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs , 2003, IEEE Electron Device Letters.

[27]  G. Ghibaudo,et al.  Electrical transport characterization of nano CMOS devices with ultra-thin silicon film , 2009, 2009 International Workshop on Junction Technology.

[28]  S. Takagi,et al.  On the Universality of Inversion Layer Mobility in Si Mosfet's: Part 11-effects of Surface Orientation , 1994 .