论文信息 - Four noise parameter determination method for transistors based on the frequency dependence of the noise figure

Four noise parameter determination method for transistors based on the frequency dependence of the noise figure

A new high frequency noise measurement method has been developed for transistors based on the frequency dependence of the noise figure. Results for a 1 µm gate length MESFET are presented.

Frédéric Aniel | G. Vernet | V. Danelon | P. Corzat

[1] B. Hughes. A temperature noise model for extrinsic FETs , 1992 .

[2] Paul Crozat,et al. 50 /spl Omega/ noise measurements with full receiver calibration without tuner , 1996 .

[3] R. Q. Lane,et al. The determination of device noise parameters , 1969 .