论文信息 - A general parameter extraction method for transistor noise models with correlation

A general parameter extraction method for transistor noise models with correlation

A new general direct extraction procedure for transistor noise models including two correlated noise sources is developed. The extraction procedure is demonstrated for a Silicon Carbide (SiC) Metal Semiconductor Field Effect Transistor (MESFET). The extracted model shows good agreement to measured noise parameters.

H. Zirath | J. Stenarson | I. Angelov | M. Garcia

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