An Improved Ultrawideband Open-Short De-Embedding Method Applied up to 220 GHz

This paper presents an improved ultrawideband open-short de-embedding methodology. In contrast to the conventional measurement-based open-short de-embedding method, the presented method is a measurement-calculation hybrid method. First, the open and short de-embedding structures are measured, and the corresponding scattering parameters are obtained. Based on this, lumped-parameter models of the open and short de-embedding structures are established. Then, the established models are modified to solve the over de-embedding problem. Finally, the modified de-embedding structure models are implemented in the scattering parameters of device test structures to achieve ultrawideband de-embedding. To verify the proposed de-embedding method, the method is applied to active devices. The results before and after de-embedding are compared under multiple bias conditions. Furthermore, the results after de-embedding based on the conventional open-short method and the proposed method are compared up to 220 GHz. These results show that using the proposed method can achieve accurate ultrawideband de-embedding up to the terahertz frequency band.

[1]  T. Sato,et al.  Interconnect Modeling: A Physical Design Perspective , 2009, IEEE Transactions on Electron Devices.

[2]  Yan Wang,et al.  A Distributed De-Embedding Solution for CMOS mm-Wave On-Wafer Measurements Based-on Double Open-Short Technique , 2013, IEEE Microwave and Wireless Components Letters.

[3]  Jun Fan,et al.  TEM-Like Launch Geometries and Simplified De-embedding for Accurate Through Silicon Via Characterization , 2017, IEEE Transactions on Instrumentation and Measurement.

[4]  Chulho Chung,et al.  Five-Step (Pad–Pad Short–Pad Open–Short–Open) De-Embedding Method and Its Verification , 2009, IEEE Electron Device Letters.

[5]  Wei Fei,et al.  Characterization of CMOS Metamaterial Transmission Line by Compact Fractional-Order Equivalent Circuit Model , 2015, IEEE Transactions on Electron Devices.

[6]  M. Fujishima,et al.  300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique , 2015, 2015 IEEE MTT-S International Microwave Symposium.

[7]  Guo-Wei Huang,et al.  A novel cascade-based de-embedding method for on-wafer microwave characterization and automatic measurement , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[8]  Troels Emil Kolding.  A Four-Step Method for De-Embedding Gigahertz , 2000 .

[9]  H. Cho,et al.  A three-step method for the de-embedding of high-frequency S-parameter measurements , 1991 .

[10]  Zhiping Yu,et al.  A Broadband Model Over 1–220 GHz for GSG Pad Structures in RF CMOS , 2014, IEEE Electron Device Letters.

[11]  Kai Kang,et al.  Characterization and Modeling of Multiple Coupled Inductors Based on On-Chip Four-Port Measurement , 2014, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[12]  Guo-Wei Huang,et al.  Comments on "A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs" , 2005 .

[13]  J.A. Reynoso-Hernandez,et al.  Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS , 2005, IEEE Transactions on Electron Devices.

[14]  W. Yin,et al.  Analysis of Frequency- and Temperature-Dependent Substrate Eddy Currents in On-Chip Spiral Inductors Using the Complex Image Method , 2007, IEEE Transactions on Magnetics.

[15]  Quan Xue,et al.  Analysis and Equivalent-Circuit Model for CMOS On-Chip Multiple Coupled Inductors in the Millimeter-Wave Region , 2015, IEEE Transactions on Electron Devices.

[16]  J.A.M. Geelen,et al.  An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[17]  Fengyi Huang,et al.  Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors , 2007, IEEE Electron Device Letters.

[18]  S. Wong,et al.  Physical modeling of spiral inductors on silicon , 2000 .

[19]  R. J. Havens,et al.  A calibrated lumped-element de-embedding technique for on-wafer RF characterization of high-quality inductors and high-speed transistors , 2003 .

[20]  Sorin P. Voinigescu,et al.  On-wafer S-parameter de-embedding of silicon active and passive devices up to 170 GHz , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[21]  D. Gloria,et al.  Improved Characterization Methology for MOSFETs up to 220 GHz , 2009, IEEE Transactions on Microwave Theory and Techniques.

[22]  H. Veenstra,et al.  Distributed de-embedding technique for accurate on-chip passive measurements based on Open-Short structures , 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[23]  Ming-Hsiang Cho,et al.  A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs , 2005, IEEE Transactions on Microwave Theory and Techniques.

[24]  Kiat Seng Yeo,et al.  THRU-Based Cascade De-embedding Technique for On-Wafer Characterization of RF CMOS Devices , 2013, IEEE Transactions on Electron Devices.

[25]  Troels Emil Kolding.  On-wafer calibration techniques for giga-hertz CMOS measurements , 1999, ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307).

[26]  Kai Kang,et al.  On-Chip Coupled Transmission Line Modeling for Millimeter-Wave Applications Using Four-Port Measurements , 2010, IEEE Transactions on Advanced Packaging.

[27]  D. Celi,et al.  State-of-the-art and future perspectives in calibration and de-embedding techniques for characterization of advanced SiGe HBTs featuring sub-THz fT/fMAX , 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[28]  R. Lee,et al.  Geometry-Scalable Parasitic Deembedding Methodology for On-Wafer Microwave Characterization of MOSFETs , 2009, IEEE Transactions on Electron Devices.

[29]  L.F. Tiemeijer,et al.  Comparison of the "pad-open-short" and "open-short-load" deembedding techniques for accurate on-wafer RF characterization of high-quality passives , 2005, IEEE Transactions on Microwave Theory and Techniques.

[30]  L. H. K. Chan,et al.  A New Millimeter-Wave Fixture Deembedding Method Based on Generalized Cascade Network Model , 2013, IEEE Electron Device Letters.

[31]  Yuan Lu,et al.  A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs , 2003 .

[32]  Wei-Cheng Lin,et al.  A Simple and Accurate Pad-Thru-Short Deembedding Method Based on Systematic Analysis for RF Device Characterization , 2015, IEEE Transactions on Electron Devices.

[33]  E. Vandamme,et al.  Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures , 2001 .

[34]  Huihua Liu,et al.  Complete model for CMOS transistors up to 66GHz , 2016, 2016 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM).

[35]  Lin-Kun Wu,et al.  Scalable Short-Open-Interconnect S-Parameter De-Embedding Method for On-Wafer Microwave Characterization of Silicon MOSFETs , 2007, IEICE Trans. Electron..

[36]  Yong-Zhong Xiong,et al.  On the De-Embedding Issue of Millimeter-Wave and Sub-Millimeter-Wave Measurement and Circuit Design , 2012, IEEE Transactions on Components, Packaging and Manufacturing Technology.