论文信息 - A pulsed S-parameters measurement setup for the non-linear characterization of FETs and bipolar power transistors

A pulsed S-parameters measurement setup for the non-linear characterization of FETs and bipolar power transistors

A pulsed I(V) and S-parameters setup for the RF modeling of semi-conductor devices is described. The management of the whole setup as well as the database is made by an object-oriented software, which provides a large amount of modularity and reusability of the different tools developed. Measurements capability on power devices is demonstrated as well as the S-parameters measurements capabilities in critical regions of FET devices. I(V) and RF measures are presented. These measurements provide a nonlinear small-signal equivalent circuit function of the command voltages.

R. Quere | M. Campovecchio | J. Portilla | J.P. Teyssier | C. Sommet

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