Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.
暂无分享,去创建一个
Wuhong Xue | Run-Wei Li | Gang Liu | Jie Shang | Xiaohui Yi | Liang Pan | Run‐Wei Li | Liang Pan | J. Shang | Gang Liu | Q. Zhan | Wuhong Xue | Xuhong Niu | Z. Ji | Xiaohui Yi | Xiao-Hong Xu | Qingfeng Zhan | Zhenghui Ji | Xuhong Niu | Xiao-Hong Xu | Xiao-hong Xu
[1] F. Zeng,et al. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance , 2014 .
[2] M. Haemori,et al. Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure , 2011 .
[3] Debashis Panda,et al. Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant. , 2016, ACS applied materials & interfaces.
[4] Tuo-Hung Hou,et al. Bipolar ${\rm Ni}/{\rm TiO}_{2}/{\rm HfO}_{2}/{\rm Ni}$ RRAM With Multilevel States and Self-Rectifying Characteristics , 2013, IEEE Electron Device Letters.
[5] M. Tsai,et al. Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film , 2014, IEEE Electron Device Letters.
[6] R. Ruoff,et al. Graphene oxide thin films for flexible nonvolatile memory applications. , 2010, Nano letters.
[7] M. Lanza,et al. Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries , 2012 .
[8] Heng-Yuan Lee,et al. An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance , 2010, IEEE Electron Device Letters.
[9] J. Tour,et al. Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene , 2012, Nature Communications.
[10] H. Sohn,et al. RESET-first unipolar resistance switching behavior in annealed Nb2O5 films , 2014 .
[11] Meiyun Zhang,et al. Impact of program/erase operation on the performances of oxide-based resistive switching memory , 2015, Nanoscale Research Letters.
[12] Luigi Pantisano,et al. Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems , 2011 .
[13] G. Gelinck,et al. Flexible active-matrix displays and shift registers based on solution-processed organic transistors , 2004, Nature materials.
[14] X. Miao,et al. Associative Learning with Temporal Contiguity in a Memristive Circuit for Large‐Scale Neuromorphic Networks , 2015 .
[15] Wei Wang,et al. Improving the electrical performance of resistive switching memory using doping technology , 2012 .
[16] Pressure-induced novel compounds in the Hf-O system from first-principles calculations , 2015, 1509.00326.
[18] Marc Porti,et al. Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures , 2012 .
[19] Steven M. George,et al. Critical tensile and compressive strains for cracking of Al2O3 films grown by atomic layer deposition , 2011 .
[20] Resistive Switching Mechanisms ofV-Doped$hboxSrZrO_3$Memory Films , 2006, IEEE Electron Device Letters.
[21] D. Stewart,et al. The missing memristor found , 2008, Nature.
[22] E. Fortunato,et al. Transparent Oxide Electronics: From Materials to Devices , 2012 .
[23] R. Geer,et al. Superior TID Hardness in TiN/HfO $_{2}$/TiN ReRAMs After Proton Radiation , 2012, IEEE Transactions on Nuclear Science.
[24] Qi Liu,et al. Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. , 2010, ACS nano.
[25] Yu Chen,et al. Polymer memristor for information storage and neuromorphic applications , 2014 .
[26] H. Hwang,et al. Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application , 2011 .
[27] Cheolmin Park,et al. Flexible Non‐Volatile Ferroelectric Polymer Memory with Gate‐Controlled Multilevel Operation , 2012, Advanced materials.
[28] P. Blaise,et al. Prediction of semimetallic tetragonal Hf2O3 and Zr2O3 from first principles. , 2012, Physical review letters.
[29] J. M. Kim,et al. Development of High-Performance Organic Thin-Film Transistors for Large-Area Displays , 2006 .
[30] T. Someya,et al. Stretchable, Large‐area Organic Electronics , 2010, Advanced materials.
[31] Jong Yeog Son,et al. NiO resistive random access memory nanocapacitor array on graphene. , 2010, ACS nano.
[32] W. Stickle,et al. Handbook of X-Ray Photoelectron Spectroscopy , 1992 .
[33] Jun Du,et al. High mechanical endurance RRAM based on amorphous gadolinium oxide for flexible nonvolatile memory application , 2015 .
[34] Yang Li,et al. Operation methods of resistive random access memory , 2014 .
[35] Frederick T. Chen,et al. Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition , 2012 .
[36] Michael M. Schieber,et al. Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds , 1977 .
[37] C. Hwang,et al. The conical shape filament growth model in unipolar resistance switching of TiO2 thin film , 2009 .
[38] V. R. Raju,et al. Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks , 2001, Proceedings of the National Academy of Sciences of the United States of America.
[39] J. Sun,et al. Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices , 2012 .
[40] G. Molas,et al. Grain boundary composition and conduction in HfO2: An ab initio study , 2013 .
[41] Enhancement of the stability of resistive switching characteristics by conduction path reconstruction , 2013 .
[42] Lih-Juann Chen,et al. Dynamic evolution of conducting nanofilament in resistive switching memories. , 2013, Nano letters.
[43] S. O. Park,et al. Electrical observations of filamentary conductions for the resistive memory switching in NiO films , 2006 .
[44] M. Weyland,et al. Chemistry of Ruddlesden–Popper planar faults at a ferroelectric–ferromagnet perovskite interface , 2011 .
[45] J. Lou,et al. In situ electro-mechanical experiments and mechanics modeling of tensile cracking in indium tin oxide thin films on polyimide substrates , 2011 .
[46] E. Vianello,et al. On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying , 2015, IEEE Transactions on Electron Devices.
[47] K. Yong,et al. Overcoming The Water Vulnerability Of Electronic Devices: A Highly Water‐Resistant ZnO Nanodevice With Multifunctionality , 2011, Advanced materials.
[48] Sheng-Yao Huang,et al. Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory , 2010 .
[49] X. T. Zhang,et al. Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance , 2011, IEEE Electron Device Letters.
[50] Gerard Ghibaudo,et al. A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory , 2014, IEEE Transactions on Electron Devices.
[51] Yichun Liu,et al. Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory , 2015 .
[52] H. Alshareef,et al. High‐Performance Non‐Volatile Organic Ferroelectric Memory on Banknotes , 2012, Advanced materials.
[53] Muhammad M. Hussain,et al. Can We Build a Truly High Performance Computer Which is Flexible and Transparent? , 2013, Scientific Reports.
[54] Jen‐Sue Chen,et al. Aluminum electrode modulated bipolar resistive switching of Al/fuel-assisted NiOx/ITO memory devices modeled with a dual-oxygen-reservoir structure. , 2012, ACS applied materials & interfaces.
[55] H. Craighead,et al. Young's modulus and density measurements of thin atomic layer deposited films using resonant nanomechanics , 2010 .
[56] Run-Wei Li,et al. Metal‐Organic Framework Nanofilm for Mechanically Flexible Information Storage Applications , 2015 .
[57] F. Zeng,et al. Conductance quantization in oxygen-anion-migration-based resistive switching memory devices , 2013 .
[58] R. Williams,et al. Sub-nanosecond switching of a tantalum oxide memristor , 2011, Nanotechnology.
[59] Wen‐Chang Chen,et al. A poly(fluorene-thiophene) donor with a tethered phenanthro[9,10-d]imidazole acceptor for flexible nonvolatile flash resistive memory devices. , 2012, Chemical communications.
[60] Seungjun Kim,et al. Flexible memristive memory array on plastic substrates. , 2011, Nano letters.
[61] Zhiming Gao,et al. Catalytic activity for methane combustion of the perovskite-type La1−xSrxCoO3−δ oxide prepared by the urea decomposition method , 2010 .
[62] Wuhong Xue,et al. Thermally Stable Transparent Resistive Random Access Memory based on All‐Oxide Heterostructures , 2014 .
[63] An Indium-Free Transparent Resistive Switching Random Access Memory , 2011, IEEE Electron Device Letters.
[64] C. Lai,et al. Resistive switching characteristics of a Pt nanoparticle-embedded SiO2-based memory , 2013 .
[65] M. Yang,et al. An analysis of “non-lattice” oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film , 2015 .
[66] R. D. Foltz. CRC Handbook of Chemistry and Physics:A Ready-Reference Book of Chemical and Physical Data , 2000 .
[67] X. Miao,et al. Ultrafast Synaptic Events in a Chalcogenide Memristor , 2013, Scientific Reports.
[68] D. Jeong,et al. Emerging memories: resistive switching mechanisms and current status , 2012, Reports on progress in physics. Physical Society.
[69] Run‐Wei Li,et al. Ion transport-related resistive switching in film sandwich structures , 2014 .
[70] E. Cantatore,et al. Plastic transistors in active-matrix displays , 2001, Nature.
[71] Jr-hau He,et al. Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three- dimensional vertical resistive memory , 2014 .
[72] Darrell G. Schlom,et al. A Thermodynamic Approach to Selecting Alternative Gate Dielectrics , 2002 .
[73] Byung Joon Choi,et al. Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films , 2007 .
[74] T. Jackson,et al. Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry , 2002 .
[75] Jae Hyuck Jang,et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.
[76] Fei Zeng,et al. Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure , 2012 .
[77] Hyunsang Hwang,et al. Noise-Analysis-Based Model of Filamentary Switching ReRAM With $\hbox{ZrO}_{x}/\hbox{HfO}_{x}$ Stacks , 2011, IEEE Electron Device Letters.
[78] Deji Akinwande,et al. High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems. , 2013, ACS nano.
[79] Kow-Ming Chang,et al. Bipolar resistive switching effect in Gd2O3 films for transparent memory application , 2011 .
[80] Peng Zhou,et al. Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance , 2010, IEEE Electron Device Letters.
[81] Sunae Seo,et al. Observation of electric-field induced Ni filament channels in polycrystalline NiOx film , 2007 .