Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC
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J. R. Williams | Leonard C. Feldman | X. D. Chen | Patricia M. Mooney | Tamara Isaacs-Smith | S. Dhar | L. Feldman | P. Mooney | J. Williams | Sarit Dhar | X. Chen | T. Isaacs-smith
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