1.2kV class SiC MOSFETs with improved performance over wide operating temperature

In this paper, we report on 1.2kV SiC MOSFETs rated to T<sub>j, max</sub>=200°C, exhibiting improved performance characteristics across operating temperature. Our devices show stable, rugged and reliable operation when subjected to industry standard qualification tests. Low on-resistance of 35mOhm/79mOhm at T<sub>j</sub>=25°C and 47mOhm/103mOhms at T<sub>j</sub>=150°C are shown for 0.1cm<sup>2</sup> and 0.2cm<sup>2</sup> die. 1000 hour High-Temperature Gate-Bias (HTGB) tests at T<sub>j</sub>=200°C show excellent threshold stability with less than 5% parametric shift observed. High-Temperature Reverse Bias (HTRB) at T<sub>j</sub>=200°C/V<sub>DS</sub>=960V also show stable and reliable operation. Single-pulse avalanche energies of over E<sub>Av</sub>=1.75J are obtained with 0.1cm<sup>2</sup> MOSFETs.