1.2kV class SiC MOSFETs with improved performance over wide operating temperature
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P. Losee | L. Stevanovic | A. Johnson | M. Hartig | D. Esler | G. Dunne | A. Bolotnikov | L. Yu | R. Beaupre | Z. Stum | S. Kennerly | Y. Sui | J. Kretchmer | S. Arthur | R. Saia | J. McMahon | D. Lilienfeld | A. Gowda | P. Sandvik | R. Olson | X. Zhu | V. Stolkarts | P. Losee | L. Stevanovic | J. Kretchmer | S. Arthur | G. Dunne | A. Bolotnikov | S. Kennerly | Z. Stum | P. Sandvik | Y. Sui | M. Hartig | R. Beaupre | V. Stolkarts | A. Gowda | D. Esler | R. Saia | D. Lilienfeld | J. McMahon | X. Zhu | L. Yu | A. Johnson | R. Olson | Liang Chun Yu | S. Kennerly | Greg Dunne | Yang Sui | James W. Kretchmer | Richard Joseph Saia | James Jay Mcmahon | Arun Virupaksha Gowda | Michael Hartig | Ronald J. Olson
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