A two-dimensional device simulator of semiconductor lasers

Abstract A two-dimensional simulator for aid in designing semiconductor lasers is developed. Poisson's equation and the current continuity equations for electrons and holes as well as the wave equation and rate equation for photons are numerically solved. Heterojunctions and carrier degeneracy are rigorously treated, and analytical results on channeled-substrate-planar lasers are presented to demonstrate the simulator. Reasonable agreement is found between calculated and experimental results, and calculated results clarify precisely the operation mechanism of semiconductor lasers. The present work enables computer simulation for the first time to be a practical design aid in research and development of various kinds of semiconductor lasers.

[1]  H. C. Casey,et al.  Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV , 1975 .

[2]  R. Olshansky,et al.  The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasers , 1983 .

[3]  T. Sudo,et al.  A numerical analysis of a heterostructure InP/InGaAs photodiode , 1983, IEEE Transactions on Electron Devices.

[4]  H. Gummel,et al.  Large-signal analysis of a silicon Read diode oscillator , 1969 .

[5]  R. Lang,et al.  Lateral transverse mode instability and its stabilization in stripe geometry injection lasers , 1979 .

[6]  Hiroo Masuda,et al.  Three-Dimensional Device Simulator CADDETH with Highly Convergent Matrix Solution Algorithms , 1985, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[7]  D. Bednarczyk,et al.  The approximation of the Fermi-Dirac integral F12 (η) , 1978 .

[8]  Naoki Chinone,et al.  Nonlinearity in power‐output–current characteristics of stripe‐geometry injection lasers , 1977 .

[9]  I. Hayashi,et al.  JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE , 1970 .

[10]  H. Casey,et al.  Heterostructure lasers , 1978 .

[11]  Martin A. Afromowitz,et al.  Refractive index of Ga1−xAlxAs , 1974 .

[12]  Ken Yamaguchi,et al.  A time-dependent and two-dimensional numerical model for MOSFET device operation , 1983 .

[13]  J.R. Hauser,et al.  A computer analysis of heterojunction and graded composition solar cells , 1977, IEEE Transactions on Electron Devices.

[14]  M. Lundstrom,et al.  Numerical analysis of heterostructure semiconductor devices , 1983, IEEE Transactions on Electron Devices.

[15]  H. Neumann,et al.  Electron mobility in Alx Ga1−x As , 1974 .

[16]  Minoru Yamada,et al.  Gain Calculation of Undoped GaAs Injection Laser Taking Account of Electronic Intra-Band Relaxation , 1981 .

[17]  J. Meijerink,et al.  An iterative solution method for linear systems of which the coefficient matrix is a symmetric -matrix , 1977 .

[18]  Naoki Chinone,et al.  Transverse mode stabilized Al x Ga 1-x As injection lasers with channeled-substrate-planar structure , 1978 .

[19]  A. Yariv,et al.  A self-consistent static model of the double- heterostructure laser , 1981, IEEE Journal of Quantum Electronics.

[20]  J. Buus.  Multimode field theory explanation of kinks in the characteristics of DH lasers , 1978 .

[21]  K. Yamaguchi,et al.  Two-dimensional device simulator for laser diodes: HILADIES , 1986 .

[22]  Minoru Yamada,et al.  Analysis of gain suppression in undoped injection lasers , 1981 .

[23]  M. J. Adams.  An introduction to optical waveguides , 1981 .

[24]  H. Gummel.  A self-consistent iterative scheme for one-dimensional steady state transistor calculations , 1964 .

[25]  J. S. Blakemore.  Semiconducting and other major properties of gallium arsenide , 1982 .

[26]  K. Wecht,et al.  Concentration dependence of the refractive index for n ‐ and p ‐type GaAs between 1.2 and 1.8 eV , 1974 .

[27]  A. H. Marshak,et al.  Electrical current in solids with position-dependent band structure , 1978 .

[28]  J. Yoshida,et al.  Modeling and characterization for high-speed GaAlAs-GaAs n-p-n heterojunction bipolar transistors , 1984, IEEE Transactions on Electron Devices.

[29]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[30]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .