Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs

Abstract The paper describes the unified analytical threshold voltage model for non-uniformly doped, dual metal gate (DMG) fully depleted silicon-on-insulator (FDSOI) MOSFETs based on the solution of 2D Poisson’s equation. 2D Poisson’s equation is solved analytically for appropriate boundary conditions using separation of variables technique. The solution is then extended to obtain the threshold voltage of the FDSOI MOSFET. The model is able to handle any kind of non-uniform doping, viz. vertical, lateral as well as laterally asymetric channel (LAC) profile in the SOI film in addition to the DMG structure. The analytical results are validated with the numerical simulations using the device simulator MEDICI.

[1]  L. Geppert.  Solid state [Semiconductors. 1999 technology analysis and forecast] , 1999, IEEE Spectrum.

[2]  Hans-Oliver Joachim,et al.  Simulation and two-dimensional analytical modeling of subthreshold slope in ultrathin-film SOI MOSFETs down to 0.1 mu m gate length , 1993 .

[3]  A. O. Adan,et al.  Analytical threshold voltage model for ultrathin SOI MOSFETs including short-channel and floating-body effects , 1999 .

[4]  Souvik Mahapatra,et al.  A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping , 1999 .

[5]  Hyung-Kyu Lim,et al.  Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's , 1983, IEEE Transactions on Electron Devices.

[6]  Ken K. Chin,et al.  Dual-material gate (DMG) field effect transistor , 1999 .

[7]  Subhasis Haldar,et al.  Analytical two-dimensional modeling for potential distribution and threshold voltage of the short-channel fully depleted SOI (silicon-on-insulator) MOSFET , 1994 .

[8]  Z.P. Sobczak,et al.  Device fabrication in {100} silicon-on-oxide produced by a scanning CW-laser-induced lateral seeding technique , 1982, IEEE Transactions on Electron Devices.

[9]  Jason C. S. Woo,et al.  Subthreshold characteristics of fully depleted submicrometer SOI MOSFET's , 1995 .

[10]  Jason C. S. Woo,et al.  Two-dimensional analytic modeling of very thin SOI MOSFETs , 1990 .

[11]  B. Gentinne,et al.  SOI technology for high-temperature applications , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[12]  S. Veeraraghavan,et al.  Short-channel effects in SOI MOSFETs , 1989 .

[13]  Louis A. Pipes,et al.  Applied Mathematics for Engineers and Physicists , 1959 .

[14]  Mansun Chan,et al.  Threshold voltage model for deep-submicrometer fully depleted SOI MOSFET's , 1995 .

[15]  V. Ramgopal Rao,et al.  Optimization and realization of sub 100nm Channel length lateral Asymmetric Channel P-MOSFETS , 2000 .

[16]  Jerry G. Fossum,et al.  Physical subthreshold MOSFET modeling applied to viable design of deep-submicrometer fully depleted SOI low-voltage CMOS technology , 1995 .

[17]  K. De Meyer,et al.  A 2-D analytical threshold voltage model for fully-depleted SOI MOSFETs with Halos or pockets , 2001 .

[18]  S. Ogura,et al.  Halo doping effects in submicron DI-LDD device design , 1985, 1985 International Electron Devices Meeting.

[19]  F. W. Kellaway,et al.  Advanced Engineering Mathematics , 1969, The Mathematical Gazette.

[20]  M.J. Kumar,et al.  Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs , 2004, IEEE Transactions on Electron Devices.

[21]  P.J. McCleer,et al.  A proposed new high-speed optical detector , 1978, IEEE Transactions on Electron Devices.

[22]  Ching-Yuan Wu,et al.  A new 2-D analytic threshold-voltage model for fully depleted short-channel SOI MOSFET's , 1993 .

[23]  K. K. Young.  Short-channel effect in fully depleted SOI MOSFETs , 1989 .

[24]  S. T. Liu,et al.  Total dose radiation hard 0.35 /spl mu/m SOI CMOS technology , 1998 .