Challenges for the integration of metal gate electrodes
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S. Samavedam | E. Luckowski | C. Capasso | S. Kalpat | K. Moore | Y. Shiho | W.J. Taylor | D. Gilmer | S. Samavedam | A. Demkov | H. Tseng | J. Schaeffer | M. Raymond | S. Kalpat | C. Capasso | W. Taylor | L. Fonseca | R. Hegde | P. Tobin | D. Triyoso | D. Roan | H.-H. Tseng | J. Jiang | R. Gregory | P.J. Tobin | R. Hegde | D. Triyoso | D.C. Gilmer | R. Gregory | L.R.C. Fonseca | D. Roan | E. Luckowski | J.K. Schaeffer | Y. Liang | B. Adetutu | A. Demkov | M.V. Raymond | B.E. White Jr | K. Moore | Y. Liang | J. Jiang | B. Adetutu | Y. Shiho | B.E. White Jr
[1] V. Misra,et al. Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS , 2002, IEEE Electron Device Letters.