Temperature dependence of insertion loss and bias drift of Ti:LiNbO3 optical external modulator

Device performance of Ti:LiNbO3 10Gbps intensity modulator and 5Gbps phase modulator has been measured over various temperature in terms of insertion loss and bias drift voltage. Insertion loss and DC bias drift changed by 0.4dB and 0.45V, respectively, whether RF&DC port is open or short.