论文信息 - An analytical quasi-saturation model for vertical DMOS power transistors

An analytical quasi-saturation model for vertical DMOS power transistors

Current analytical models for vertical DMOS power transistors do not provide accurate explanation of quasi-saturation phenomenon. An analytical quasi-saturation model for vertical DMOS power transistors considering a nonuniform electron distribution in the n-epi region is described. As verified by the PISCES results, the quasi-saturation model provides a much better explanation of DMOS quasi-saturation behaviour than the previous model. >

Jin-Hau Kuo | C. M. Liu | K. H. Lou

[1] M. Darwish,et al. Study of the quasi-saturation effect in VDMOS transistors , 1986, IEEE Transactions on Electron Devices.

[2] R. E. Thomas,et al. Carrier mobilities in silicon empirically related to doping and field , 1967 .

[3] Jerry G. Fossum,et al. Physical DMOST modeling for high-voltage IC CAD , 1990 .

[4] B. J. Baliga,et al. Modern Power Devices , 1987 .

[5] Y. Tsividis. Operation and modeling of the MOS transistor , 1987 .

[6] K. Shenai,et al. Optimally scaled low-voltage vertical power MOSFETs for high-frequency power conversion , 1990 .

[7] Krishna Shenai,et al. A circuit simulation model for high-frequency power MOSFETs , 1991 .

[8] Jin-Hau Kuo,et al. Analysis of the quasi-saturation behavior considering the drain-to-source voltage and cell-spacing effects for a vertical DMOS power transistor , 1993 .