论文信息 - Mid-infrared intersubband electroluininescence in InAs/AlSb cascade structures

Mid-infrared intersubband electroluininescence in InAs/AlSb cascade structures

Mid-infrared intersubband electroluminescence is reported in InAs single quantum wells embedded in InAs/AlSb quantum cascade structures. The observed emission energy is in good agreement with calculations based on the multiband k/spl middot/p theory. The dominant polarisation of the emitted light is perpendicular to the quantum well layers.

H. Ohno | K. Ohtani

[1] H. Ohno,et al. INTERSUBBAND ELECTROLUMINESCENCE IN INAS/GASB/ALSB TYPE-II CASCADE STRUCTURES , 1999 .

[2] F. Julien,et al. Design and simulation of low-threshold antimonide intersubband lasers , 1998 .

[3] Federico Capasso,et al. High-power λ≈8 μm quantum cascade lasers with near optimum performance , 1998 .

[4] J. Jimenez,et al. Optical Gain of Type I and Type II Quantum Cascade Lasers , 1998 .

[5] Carlo Sirtori,et al. High-power continuous-wave quantum cascade lasers , 1998 .

[6] Carlo Sirtori,et al. Infrared (4-11 μm) quantum cascade lasers , 1997 .

[7] Wixforth,et al. Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field. , 1996, Physical review. B, Condensed matter.

[8] Carlo Sirtori,et al. Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption spectroscopy , 1993 .