Dual sided doped memristor and it's mathematical modelling

In this paper, a new structure for memristor with two active layers of TiO2 and its linear ions drift model has been proposed. Simulation results show significant improvement in the memristor ROFF/RON ratio as compared to single active layer HP lab (conventional) memristor. As a result, switching speed and noise margin of the proposed memristor will be far better than the conventional memristor. With the aid of the mathematical modelling, we examine the current-voltage characteristic of the proposed device structure and compared with conventional memristor.

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