论文信息 - Electroluminescence characteristics of GaN HEMT at off-state

Electroluminescence characteristics of GaN HEMT at off-state

Two types of light emission characteristics at the off-state breakdown of GaN HEMTs were observed and investigated. One of them showed a yellow band electroluminescence characteristic at room temperature, which might be attributed to the same origin of yellow luminescence (YL) defects. The electric field dependence of this YL-like light emission was found to be more sensitive than the other type. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

G. P. Li | Z. Lai | R. Penner | S. Kung | H. Chen

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