论文信息 - High Quality Growth of SiO 2 at 80° C by Electron Cyclotron Resonance (ECR) for Thin Film Transistors - 字舞流文

High Quality Growth of SiO 2 at 80° C by Electron Cyclotron Resonance (ECR) for Thin Film Transistors

John Robertson | Andrew J. Flewitt | W. I. Milne | J. Robertson | A. Flewitt | W. Milne | D. Grambole | D. Grambole | Riyaz Rashid | U. Kreiβig | R. Rashid | U. Kreiβig

[1] Takashi Noguchi,et al. High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C , 2000 .

[2] Fujio Okumura,et al. Controlling the Amount of Si-OH Bonds for the Formation of High-Quality Low-Temperature Gate Oxides for Poly-Si TFTs , 1998 .

[3] N. Jiang,et al. Radio‐frequency bias effects on SiO2 films deposited by distributed electron cyclotron resonance plasma enhanced chemical vapor deposition , 1994 .

[4] A. Gill,et al. Water-related instability in TFTs formed using deposited gate oxides , 1992 .

[5] E. Adams,et al. Silicon dioxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition , 1992 .

[6] D. Thomson,et al. Low‐temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas , 1989 .

[7] J. K. Srivastava,et al. Low‐temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy , 1987 .

[8] John Batey,et al. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition , 1986 .

[9] G. Lucovsky,et al. Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition , 1986 .

[10] Seitaro Matsuo,et al. Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma , 1983 .