Comparison Of The Growth Of InP And InAs By Atomic Layer Epitaxy

The growth behavior of InP and InAs by thermal atomic layer epitaxy is described. The epilayers were grown in the range 320°C-370°C where the growth is predominantly controlled by surface reactions. For InAs, the growth rate strongly saturates at a growth temperature of 340°C. The growth rate is a strong function of alkyl exposure time for the same integrated alkyl exposure during the cycle. This dependence on exposure time is proposed to be caused by steric hindrance effects of the initial adsorbates and the low surface reaction rates of the alkyls at these temperatures. For InP, the growth rate shows saturation at 320°C but does not saturate at higher temperatures. To achieve saturation at this temperature, a PH3 exposure of one order of magnitude higher than the AsH3 exposure required for InAs atomic layer epitaxy is needed. Contrary to InAs, the growth rate does not saturate at 340°C. The difference of saturation behavior between InP and InAs is thought to be due to lower surface reactivity of PH3 which leads to the formation of In droplets and a higher decomposition rate of In alkyls on P than on As.

[1]  J. Nishizawa,et al.  Mechanism of surface reaction in GaAs layer growth , 1987 .

[2]  S. Denbaars,et al.  GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy , 1987 .

[3]  H. Ohno,et al.  Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE , 1988 .

[4]  M. Pessa.  Atomic Layer Epitaxy of Compound Semiconductors , 1987 .

[5]  S. Denbaars,et al.  Atomic layer epitaxy for the growth of heterostructure devices , 1988 .

[6]  S. Namba,et al.  A Growth Analysis for Metalorganic Vapor Phase Epitaxy of GaAs , 1988 .

[7]  Bhat,et al.  Kinetic limits of monolayer growth on (001) GaAs by organometallic chemical-vapor deposition. , 1988, Physical review letters.

[8]  Susumu Namba,et al.  Atomic‐layer growth of GaAs by modulated‐continuous‐wave laser metal‐organic vapor‐phase epitaxy , 1987 .

[9]  N. El-Masry,et al.  Atomic layer epitaxy of the Ga-As-In-As superalloy , 1987 .

[10]  Markus Pessa,et al.  atomic layer epitaxy , 1986, Catalysis from A to Z.

[11]  S. Denbaars,et al.  Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD , 1986 .

[12]  Gerald B. Stringfellow,et al.  Mass spectrometric studies of phosphine pyrolysis and OMVPE growth of InP , 1987 .

[13]  J. Hayes,et al.  Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base , 1988, IEEE Electron Device Letters.

[14]  M. Ozeki,et al.  New approach to the atomic layer epitaxy of GaAs using a fast gas stream , 1988 .

[15]  S. Namba,et al.  Growth of GaAs by switched laser metalorganic vapor phase epitaxy , 1986 .