High-speed III-V semiconductor intensity modulators

A description is given of a GaAs-AlGaAs, loaded-line traveling-wave modulator which has achieved bandwidths up to 36 GHz to date with low ( >

[1]  K. Kuchler,et al.  Analysis of Coupled Slots and Coplanar Strips on Dielectric Substrate , 1975 .

[2]  Hideki Hasegawa,et al.  M.I.S. and Schottky slow-wave coplanar striplines on GaAs substrates , 1977 .

[3]  U. Langmann,et al.  Capacitively Loaded Transmission Line for Subnanosecond Stepped Delta beta Operation of an Integrated Optical Directional Coupler Switch , 1982, 1982 IEEE MTT-S International Microwave Symposium Digest.

[4]  G. D. Thurmond,et al.  17‐GHz bandwidth electro‐optic modulator , 1983 .

[5]  F. K. Reinhart,et al.  Electro‐optical light modulation in InGaAsP/InP double heterostructure diodes , 1983 .

[6]  Brian H. Kolner,et al.  Microwave integrated optical modulator , 1984 .

[7]  G. Ghione,et al.  Analytical formulas for coplanar lines in hybrid and monolithic MICs , 1984 .

[8]  R. A. Becker,et al.  Traveling‐wave electro‐optic modulator with maximum bandwidth‐length product , 1984 .

[9]  Shigeyuki Akiba,et al.  High-speed electroabsorption modulator with strip-loaded InGaAsP planar waveguide , 1986, Topical Meeting on Integrated and Guided-Wave Optics.

[10]  Traveling-wave 1.3-microm interferometer modulator with high bandwidth, low drive power, and low loss. , 1986, Applied optics.

[11]  H. Wieder,et al.  Franz–Keldysh electrorefraction and electroabsorption in bulk InP and GaAs , 1986 .

[12]  Shih-Yuan Wang,et al.  GaAs PIN electro-optic travelling-wave modulator at 1.3 μm , 1986 .

[13]  R. R. Bradley,et al.  Narrow, high-NA GaAs/GaAlAs optical waveguides with losses below 0.7±0.1 dB cm-1 , 1987 .

[14]  S. Y. Wang,et al.  GaAs traveling‐wave polarization electro‐optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm , 1987 .

[15]  Shigeyuki Akiba,et al.  Monolithic integration of InGaAsP/InP distributed feedback laser and electroabsorption modulator by vapor phase epitaxy , 1987 .

[16]  Giovanni Ghione,et al.  Coplanar Waveguides for MMIC Applications: Effect of Upper Shielding, Conductor Backing, Finite-Extent Ground Planes, and Line-to-Line Coupling , 1987 .

[17]  Gregory Raybon,et al.  Optical intensity modulation to 40 GHz using a waveguide electro‐optic switch , 1987 .

[18]  K. Atsuki,et al.  Transmission line aspects of the design of broad-band electrooptic traveling-wave modulators , 1987 .

[19]  Moshe Nazarathy,et al.  Spread spectrum frequency response of coded phase reversal traveling wave modulators , 1987 .

[20]  R. Walker,et al.  High-speed electrooptic modulation in GaAs/GaAlAs waveguide devices , 1987 .

[21]  Moshe Nazarathy,et al.  Coded phase-reversal LiNbO 3 modulator with bandwidth greater than 20 GHz at 1.3μm wavelength , 1987 .

[22]  Shih-Yuan Wang,et al.  High speed III-V electrooptic waveguide modulators at lambda -1.3 mu m , 1988 .

[23]  L. Coldren,et al.  Analysis of depletion edge translation lightwave modulators , 1988 .

[24]  O. Mitomi,et al.  High-speed InGaAlAs/InAlAs multiple quantum well optical modulators with bandwidths in excess of 20 GHz at 1.55 mu m , 1989, IEEE Photonics Technology Letters.

[25]  Tsutomu Kitoh,et al.  New travelling-wave electrode Mach-Zehnder optical modulator with 20 GHz bandwidth and 4.7 V driving voltage at 1.52 mu m wavelength , 1989 .

[26]  Gerard Mourou,et al.  100 GHz traveling‐wave electro‐optic phase modulator , 1989 .

[27]  R. G. Walker,et al.  Broadband (6 GHz) GaAs/AlGaAs electro‐optic modulator with low drive power , 1989 .

[28]  I. Bennion,et al.  Novel GaAs/AlGaAs guided-wave analogue/digital convertor , 1989 .

[29]  O. Mitomi,et al.  High-speed electrooptic phase modulators using InGaAs/InAlAs multiple quantum well waveguides , 1989, IEEE Photonics Technology Letters.

[30]  J. Johnson,et al.  High-speed low-voltage modulation with a nonsymmetric Mach-Zehnder interferometer , 1989 .

[31]  I. Bennion,et al.  Low-voltage, 50 Omega , GaAs/AlGaAs travelling-wave modulator with bandwidth exceeding 25 GHz , 1989 .

[32]  M. Wegener,et al.  Optical waveguide intensity modulators based on a tunable electron density multiple quantum well structure , 1990 .

[33]  I. Kim,et al.  Velocity matching of III-V travelling-wave electro-optic modulator structures , 1990 .

[34]  G. Valliath,et al.  Tradeoff between phase- and intensity modulation in GaAs/AlGaAs double heterostructure and multiple quantum well phase-modulator waveguides , 1990, IEEE Photonics Technology Letters.

[35]  U. Koren,et al.  Miniature Mach-Zehnder InGaAsP quantum well waveguide interferometers for 1.3 mu m , 1990, IEEE Photonics Technology Letters.

[36]  M. Wegener,et al.  Large refractive index changes in tunable-electron-density InGaAs/InAlAs quantum wells , 1990, IEEE Photonics Technology Letters.

[37]  Hiroshi Ishikawa,et al.  High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source , 1990 .

[38]  Efficient InGaAsP/InP multiple quantum well waveguide optical phase modulator , 1990 .

[39]  Osamu Mitomi,et al.  High‐speed InGaAs/InAlAs multiple‐quantum‐well optical modulator , 1990 .