论文信息 - A 0.1-W CMOS class-E power amplifier for Bluetooth applications

A 0.1-W CMOS class-E power amplifier for Bluetooth applications

This paper describes the design of a CMOS class-E RF power amplifier for Bluetooth applications in a standard 0.35-/spl mu/m CMOS technology. Simulation results using Spectre with MOS level 49 parameters show that the power amplifier can deliver 100 mW output power to 50-/spl Omega/ load at 2.4 GHz with 64% drain efficiency and 59% power-added-efficiency respectively under a single supply voltage of 2.5 V.

Apinunt Thanachayanont | Phairoj Luengvongsakorn

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