High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier

In this work, high-performance high-electron-mobility transistors (HEMTs) with a thin GaN channel and an AlN back barrier were fabricated and investigated in detail. The AlN back barrier HEMTs possess a higher current density and a better linearity than traditional devices. In addition, the off-state leakage current of the AlN back barrier HEMTs is more than one order of magnitude lower than that of traditional devices with a high-resistance Fe-doped GaN buffer, even though they do not involve any intentional doping technique. Additionally, the high-temperature performance of the AlN back barrier HEMTs is excellent, with less attenuation in the drain current density and less increase in the off-state leakage current. Moreover, the breakdown voltage of the AlN back barrier HEMTs is as high as 309 V with an LGD of 2.5  μm, resulting in a high Baliga figure of merit of 0.354 GW/cm2. The superior performance of the AlN back barrier devices is further demonstrated by the calculation and simulation results. The results in this work not only show the great potential of AlN back barrier HEMTs but also provide a useful direction for overcoming the limiting issues of nitride devices.

[1]  Jincheng Zhang,et al.  Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD , 2022, Ceramics International.

[2]  Y. Hao,et al.  8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer , 2022, Applied Physics Letters.

[3]  S. Narumanchi,et al.  A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices , 2021, Applied Physics Letters.

[4]  V. N. Ramakrishnan,et al.  Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications , 2020, Journal of Science: Advanced Materials and Devices.

[5]  Sen Huang,et al.  Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs , 2020 .

[6]  Y. Hao,et al.  High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier , 2019, Applied Physics Letters.

[7]  H. Osten,et al.  Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application , 2019, Applied Physics Letters.

[8]  G. Longobardi,et al.  On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices , 2017 .

[9]  M. Kuball,et al.  AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics , 2013 .

[10]  Y. Aoyagi,et al.  AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current , 2009 .

[11]  V. Palankovski,et al.  High-temperature modeling of AlGaN/GaN HEMTs , 2009, 2009 International Semiconductor Device Research Symposium.

[12]  David L. Jones,et al.  Protein breakdown represents a major bottleneck in nitrogen cycling in grassland soils. , 2009 .

[13]  Syed K. Islam,et al.  Temperature dependent analytical model for current-voltage characteristics of AlGaN/GaN power HEMT , 2009 .

[14]  Kazushige Horio,et al.  Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors , 2005 .

[15]  Hiroyasu Ishikawa,et al.  Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon , 2005 .

[16]  E. Schubert,et al.  Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method , 2004 .

[17]  M. Stroscio,et al.  Polar optical-phonon scattering in three- and two-dimensional electron gases , 1995 .

[18]  Seikoh Yoshida,et al.  C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE , 2007 .