High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier
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Jincheng Zhang | Baiqi Wang | Yue Hao | Wenjun Liu | Yachao Zhang | Kui Dang | Jinbang Ma | Yixin Yao | Kai Chen | Yaolong Dong | Xing Wang
[1] Jincheng Zhang,et al. Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD , 2022, Ceramics International.
[2] Y. Hao,et al. 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer , 2022, Applied Physics Letters.
[3] S. Narumanchi,et al. A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices , 2021, Applied Physics Letters.
[4] V. N. Ramakrishnan,et al. Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications , 2020, Journal of Science: Advanced Materials and Devices.
[5] Sen Huang,et al. Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs , 2020 .
[6] Y. Hao,et al. High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier , 2019, Applied Physics Letters.
[7] H. Osten,et al. Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application , 2019, Applied Physics Letters.
[8] G. Longobardi,et al. On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices , 2017 .
[9] M. Kuball,et al. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics , 2013 .
[10] Y. Aoyagi,et al. AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current , 2009 .
[11] V. Palankovski,et al. High-temperature modeling of AlGaN/GaN HEMTs , 2009, 2009 International Semiconductor Device Research Symposium.
[12] David L. Jones,et al. Protein breakdown represents a major bottleneck in nitrogen cycling in grassland soils. , 2009 .
[13] Syed K. Islam,et al. Temperature dependent analytical model for current-voltage characteristics of AlGaN/GaN power HEMT , 2009 .
[14] Kazushige Horio,et al. Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors , 2005 .
[15] Hiroyasu Ishikawa,et al. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon , 2005 .
[16] E. Schubert,et al. Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method , 2004 .
[17] M. Stroscio,et al. Polar optical-phonon scattering in three- and two-dimensional electron gases , 1995 .
[18] Seikoh Yoshida,et al. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE , 2007 .