Effects of excess Sb on crystallization of δ‐phase SbTe binary thin films
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Man Young Sung | Yong Tae Kim | M. Sung | Yong Tae Kim | Young-Hwan Kim | Min Soo Youm | M. Youm | Young Hwan Kim
[1] N. Yamada,et al. Extremely long period-stacking structure in the Sb-Te binary system. , 2005, Acta crystallographica. Section B, Structural science.
[2] C. M. Garner,et al. The amorphous Sb1−xTex system , 1974 .
[3] J. Hosson,et al. On the crystallization of thin films composed of Sb3.6Te with Ge for rewritable data storage , 2004 .
[4] Bart J. Kooi,et al. Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films , 2006 .
[5] J. Hosson,et al. Influence of electron beam exposure on crystallization of phase-change materials , 2007 .
[6] G. Chae. A Modified Transparent Conducting Oxide for Flat Panel Displays Only , 2001 .
[7] M. Lankhorst,et al. Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.
[8] Nonvolatile Memory Based on Phase Transition in Chalcogenide Thin Film , 1993 .
[9] Man Young Sung,et al. Effects of bottom electrode and environmental insulator on thermal distribution of edge contact-type PRAM cell , 2007, Microelectron. J..
[10] Structural study on the crystallization behavior of Sb3Te2 alloy for phase change memory , 2007 .
[11] Masud Mansuripur,et al. Crystallization behavior of Ge-doped eutectic Sb70Te30 films in optical disks. , 2002, Applied optics.
[12] Lawrence H. Bennett,et al. Binary alloy phase diagrams , 1986 .
[13] Liesbeth Van Pieterson,et al. Prospects of Doped Sb-Te Phase-Change Materials for High-Speed Recording , 2003 .
[14] Bomy Chen,et al. Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material , 2005 .