论文信息 - High performance AlAs/GaXIn1-xAs resonant tunneling diodes by metalorganic chemical vapor deposition

High performance AlAs/GaXIn1-xAs resonant tunneling diodes by metalorganic chemical vapor deposition

We report on AlAs/GaxJn1−xAs (x = 0.47) quantum well heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on InP substrates. Heterostructure quality was evaluated by high resolution x-ray diffraction for various growth conditions. Double barrier quantum well heterostructures were grown and processed into resonant tunneling diodes (RTDs). Room temperature electrical measurements of the RTDs yielded maximum peak to valley current ratios of 7.7 with peak current density of 96 kA/cm2 and 11.3 with peak current density of 12 kA/cm2, for devices grown by atmospheric and low pressure MOCVD, respectively.

S. Denbaars | U. Mishra | J. Yen | B. Keller

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