Submilliamp threshold vertical‐cavity laser diodes

We report for the first time room‐temperature, continuous‐wave operation of individual vertical‐cavity laser diodes with submilliampere threshold currents. A single quantum well active region emitting at 979 nm surrounded by GaAs/AlAs Bragg reflector mirrors was used. Threshold currents were as low as 0.7 mA. A record low linewidth‐power product of 5 MHz mW and a linewidth as narrow as 85 MHz was measured. High yield and good uniformity were demonstrated.

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