Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates

We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition (HWCVD). Using Raman spectroscopy, spectroscopic ellipsometry, and atomic force microscopy, we find the relationship between surface roughness evolution and (i) the substrate temperature (230–350 °C) and (ii) the hydrogen dilution ratio (H2/SiH4=0–480). The absolute silicon film thickness for fully crystalline films is found to be the most important parameter in determining surface roughness, hydrogen being the second most important. Higher hydrogen dilution increases the surface roughness as expected. However, surface roughness increases with increasing substrate-temperature, in contrast to previous studies of crystalline Si growth. We suggest that the temperature-dependent roughness evolution is due to the role of hydrogen during the HWCVD process, which in this high hydrogen dilution regime allows for epitaxial growth on the rms roughest films through a kinetic growth regime of shadow-dominated etch and desorption and redeposition of growth species.

[1]  H. Atwater,et al.  Hot-wire CVD-grown epitaxial Si films on Si (100) substrates and a model of epitaxial breakdown , 2006 .

[2]  H. Atwater,et al.  A phase diagram for morphology and properties of low temperature deposited polycrystalline silicon grown by hot-wire chemical vapor deposition , 2005, Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..

[3]  J. Abelson,et al.  Simultaneous short-range smoothening and global roughening during growth of hydrogenated amorphous silicon films , 2004 .

[4]  S. Gupta,et al.  Role of H in hot-wire deposited a-Si:H films revisited: optical characterization and modeling , 2004 .

[5]  W. Fuhs,et al.  Low-temperature silicon homoepitaxial growth by pulsed magnetron sputtering , 2004 .

[6]  R. Schropp Present status of micro- and polycrystalline silicon solar cells made by hot-wire chemical vapor deposition , 2004 .

[7]  Angeliki Tserepi,et al.  Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors , 2003 .

[8]  K. Jones,et al.  Effects of dilution ratio and seed layer on the crystallinity of microcrystalline silicon thin films deposited by hot-wire chemical vapor deposition , 2003 .

[9]  Ahm Arno Smets,et al.  Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth , 2003 .

[10]  T. Karabacak,et al.  Growth front roughening in silicon nitride films by plasma-enhanced chemical vapor deposition , 2002 .

[11]  Eray S. Aydil,et al.  Mechanism of hydrogen-induced crystallization of amorphous silicon , 2002, Nature.

[12]  J. Amar,et al.  Scaling behavior of the surface in ballistic deposition. , 2002, Physical review. E, Statistical, nonlinear, and soft matter physics.

[13]  G. Parsons,et al.  Surface transport kinetics in low-temperature silicon deposition determined from topography evolution , 2001 .

[14]  A. Gallagher Some physics and chemistry of hot-wire deposition , 2001 .

[15]  W. Goddard,et al.  Gas phase and surface kinetic processes in polycrystalline silicon hot-wire chemical vapor deposition , 2001 .

[16]  M. Koshi,et al.  Catalytic decomposition of SiH4 on a hot filament , 2001 .

[17]  Toh-Ming Lu,et al.  Growth-front roughening in amorphous silicon films by sputtering , 2001 .

[18]  E. Albano,et al.  Competitive growth model involving random deposition and random deposition with surface relaxation. , 2001, Physical review. E, Statistical, nonlinear, and soft matter physics.

[19]  White,et al.  Direct absorption of gas-phase atomic hydrogen by si(100): A narrow temperature window , 2000, Physical review letters.

[20]  Gwo-Ching Wang,et al.  Surface roughening in shadowing growth and etching in 2¿1 dimensions , 2000 .

[21]  Toh-Ming Lu,et al.  Mechanisms for plasma and reactive ion etch-front roughening , 2000 .

[22]  K. Sasaki,et al.  Etching Effect of Hydrogen Plasma on Electron Cyclotron Resonance-Chemical Vapor Deposition and Its Application to Low Temperature Si Selective Epitaxial Growth. , 1998 .

[23]  E. C. Molenbroek,et al.  Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition , 1997 .

[24]  David M. Tanenbaum,et al.  Surface roughening during plasma-enhanced chemical-vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates , 1997 .

[25]  D. Eaglesham,et al.  SURFACE ROUGHENING DURING LOW TEMPERATURE SI(100) EPITAXY , 1997 .

[26]  J. Spitzmüller,et al.  Structures on Si(100) 2 × 1 at the Initial Stages of Homoepitaxy by SiH 4 Decomposition , 1997 .

[27]  E. Molenbroek,et al.  Film quality in relation to deposition conditions of a‐SI:H films deposited by the ‘‘hot wire’’ method using highly diluted silane , 1996 .

[28]  Lee,et al.  Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates. , 1996, Physical review. B, Condensed matter.

[29]  D. J. Eaglesham,et al.  Semiconductor molecular‐beam epitaxy at low temperatures , 1995 .

[30]  Kenjiro Nakamura,et al.  Roles of Atomic Hydrogen in Chemical Annealing , 1995 .

[31]  S. Oda,et al.  Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma , 1994 .

[32]  S. Radelaar,et al.  Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy? , 1994 .

[33]  D. Eaglesham,et al.  Effect of H on Si molecular‐beam epitaxy , 1993 .

[34]  D. Vvedensky,et al.  Stochastic equations of motion for epitaxial growth. , 1993, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

[35]  Ganguly,et al.  Defect formation during growth of hydrogenated amorphous silicon. , 1993, Physical review. B, Condensed matter.

[36]  Guo,et al.  Shadowing instability in three dimensions. , 1993, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

[37]  J. Hanna,et al.  A novel preparation technique for preparing hydrogenated amorphous silicon with a more rigid and stable Si network , 1991 .

[38]  Redfield,et al.  Growth dynamics of chemical vapor deposition. , 1989, Physical review letters.

[39]  Alan Gallagher,et al.  Production of high-quality amorphous silicon films by evaporative silane surface decomposition , 1988 .

[40]  Hagan,et al.  Columnar growth in thin films. , 1988, Physical review letters.

[41]  F. Family Scaling of rough surfaces: effects of surface diffusion , 1986 .

[42]  Tamás Vicsek,et al.  Scaling of the active zone in the Eden process on percolation networks and the ballistic deposition model , 1985 .

[43]  J. Malherbe,et al.  Thin Solid Films , 2008 .

[44]  W. Eccleston,et al.  Mater. Res. Soc. Symp. Proc. , 2006 .

[45]  R. Reedy,et al.  Silicon Homoepitaxy Using Tantalum-Filament Hot-Wire Chemical Vapor Deposition; , 2005 .

[46]  S. Okur,et al.  INSTABILITY PHENOMENA IN MICROCRYSTALLINE SILICON FILMS , 2005 .

[47]  J. Robertson Thermodynamic model of nucleation and growth of plasma deposited microcrystalline silicon , 2003 .

[48]  A. Masuda,et al.  Properties of Large Grain-Size poly-Si Films by Catalytic Chemical Sputtering , 2001 .

[49]  J. Hanna,et al.  Control of nucleation and growth in the preparation of crystals by plasma-enhanced chemical vapour deposition , 1991 .