Modeling and parameter extraction of SiGe: C HBT's with HICUM for the emerging terahertz era

This paper presents a status of the HICUM model development activities (within the DOTFIVE project) for future technologies. Physics based scalable model libraries are realized for two of the most advanced SiGe:C HBT processes currently available. The parameter extraction methodology is described via two meaningful examples. Measurement and simulation comparisons are shown

[1]  Michael Schröter.  High-Frequency Circuit Design Oriented Compact Bipolar Transistor Modeling with HICUM , 2005, IEICE Trans. Electron..

[2]  Michael Schroter,et al.  Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions , 1991 .

[3]  Christian Raya.  Modélisation et optimisation de transistors bipolaires à hétérojonction Si/SiGeC ultra rapides pour applications millimétriques , 2008 .

[4]  Michael Schroter,et al.  Development and Design Kit Integration of a Scalable and Statistical High Current Model for Advanced SiGe HBTs , 2006 .

[5]  M. Schroter,et al.  The rectangular bipolar transistor tetrode structure and its application , 2007, 2007 IEEE International Conference on Microelectronic Test Structures.

[6]  Hassene Mnif,et al.  Transit time parameter extraction for the HICUM bipolar compact model , 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

[7]  D. Celi,et al.  An improved method for determining the transit time of Si/SiGe bipolar transistors , 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

[8]  S. Decoutere,et al.  A 400GHz fMAX fully self-aligned SiGe:C HBT architecture , 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[9]  D. Celi,et al.  Compact Layout and Bias-Dependent Base-Resistance Modeling for Advanced SiGe HBTs , 2008, IEEE Transactions on Electron Devices.

[10]  D. Celi,et al.  A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX , 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.