Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity

We report the fabrication of light-sensing thin-film transistors based on solution processed films of ZnO, as the channel material, functionalized with an organic dye as the light sensitizer. Due to the presence of the dye, the hybrid devices show exceptionally high photosensitivity to green light of 106 and a maximum photoresponsivity on the order of 104 A/W. The high performance is argued to be the result of the grain barrier limited nature of electron transport across the polycrystalline ZnO film and its dependence on charge carrier density upon illumination with green light. In addition to the excellent photoresponsivity and signal gain, the hybrid ZnO-dye photoactive layer exhibits high optical transparency. The unique combination of simple device fabrication and distinctive physical characteristics, such as optical transparency, renders the technology attractive for application in large-area transparent photodetectors.

[1]  Youngmee Kim,et al.  Highly Photosensitive J‐Aggregated Single‐Crystalline Organic Transistors , 2011, Advanced materials.

[2]  I.-Kang Ding,et al.  Photoinduced Electron Transfer in Dye‐Sensitized SnO2 Nanowire Field‐Effect Transistors , 2011 .

[3]  Iain McCulloch,et al.  Air‐Stable Solution‐Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm2 V−1 s−1 , 2010, Advanced materials.

[4]  S. Khondaker,et al.  High performance organic phototransistor based on regioregular poly(3-hexylthiophene) , 2010, Nanotechnology.

[5]  Paul H. Wöbkenberg,et al.  Low-voltage ambipolar phototransistors based on a pentacene/PC61BM heterostructure and a self-assembled nano-dielectric , 2010 .

[6]  Hagen Klauk,et al.  Organic thin-film transistors. , 2010, Chemical Society reviews.

[7]  J. Medvedeva.  Combining Optical Transparency with Electrical Conductivity: Challenges and Prospects , 2010 .

[8]  Giovanni Scalmani,et al.  A TD-DFT investigation of ground and excited state properties in indoline dyes used for dye-sensitized solar cells. , 2009, Physical chemistry chemical physics : PCCP.

[9]  Feng Yan,et al.  Highly photosensitive thin film transistors based on a composite of poly(3-hexylthiophene) and titania nanoparticles , 2009 .

[10]  Yu-Wei Chang,et al.  The Ring-Shaped CMOS-Based Phototransistor With High Responsivity for the UV/Blue Spectral Range , 2009, IEEE Photonics Technology Letters.

[11]  Paul H. Wöbkenberg,et al.  High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere , 2009 .

[12]  Yang-Kyu Choi,et al.  Transparent Zinc Oxide Gate Metal–Oxide–Semiconductor Field-Effect Transistor for High-Responsivity Photodetector , 2009, IEEE Electron Device Letters.

[13]  Seeram Ramakrishna,et al.  Controlled electron injection and transport at materials interfaces in dye sensitized solar cells , 2009 .

[14]  Feng Yan,et al.  Organic phototransistor based on poly(3-hexylthiophene)/TiO2 nanoparticle composite , 2008 .

[15]  Chun-Wei Chen,et al.  Near-ultraviolet photodetector based on hybrid polymer/zinc oxide nanorods by low-temperature solution processes , 2008 .

[16]  K. Ellmer,et al.  Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide , 2008 .

[17]  Ullrich Scherf,et al.  Organic semiconductors for solution-processable field-effect transistors (OFETs). , 2008, Angewandte Chemie.

[18]  D. Moses,et al.  High performance light emitting transistors , 2008 .

[19]  Meiya Li,et al.  Radio frequency sputtered zinc oxide thin films with application to metal–semiconductor–metal photodetectors , 2007 .

[20]  Henning Sirringhaus,et al.  Electron and ambipolar transport in organic field-effect transistors. , 2007, Chemical reviews.

[21]  C. Soci,et al.  ZnO nanowire UV photodetectors with high internal gain. , 2007, Nano letters.

[22]  A. Zunger,et al.  Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides. , 2007, Physical review letters.

[23]  Hyunwoong Park,et al.  Effect of the anchoring group in Ru-bipyridyl sensitizers on the photoelectrochemical behavior of dye-sensitized TiO2 electrodes: carboxylate versus phosphonate linkages. , 2006, The journal of physical chemistry. B.

[24]  J. Thong,et al.  Simple fabrication of a ZnO nanowire photodetector with a fast photoresponse time , 2006 .

[25]  H. Morkoç,et al.  A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES , 2005 .

[26]  Hidetoshi Miura,et al.  Organic Dye for Highly Efficient Solid‐State Dye‐Sensitized Solar Cells , 2005 .

[27]  Yong-Young Noh,et al.  High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer , 2005 .

[28]  J. Kanicki,et al.  Thin-film organic polymer phototransistors , 2004, IEEE Transactions on Electron Devices.

[29]  J. Salbeck,et al.  Organic phototransistor based on intramolecular charge transfer in a bifunctional spiro compound , 2004 .

[30]  Michael Grätzel,et al.  Investigation of Sensitizer Adsorption and the Influence of Protons on Current and Voltage of a Dye-Sensitized Nanocrystalline TiO2 Solar Cell , 2003 .

[31]  J. Wager.  Transparent Electronics , 2003, Science.

[32]  G. Thomas.  Materials science: Invisible circuits , 1997, Nature.

[33]  M. Grätzel,et al.  A low-cost, high-efficiency solar cell based on dye-sensitized colloidal TiO2 films , 1991, Nature.

[34]  Giorgio Baccarani,et al.  Transport properties of polycrystalline silicon films , 1978 .

[35]  J. Seto.  The electrical properties of polycrystalline silicon films , 1975 .

[36]  William L. Warren,et al.  Correlation between photoluminescence and oxygen vacancies in ZnO phosphors , 1996 .