Possible applications of scanning frequency comb microscopy for carrier profiling in semiconductors

In scanning frequency comb microscopy, a mode-locked ultrafast laser is focused on the tunneling junction of a scanning tunneling microscope to generate a microwave frequency comb (MFC) with hundreds of measurable harmonics that is superimposed on the dc tunneling current when the sample is metallic. With semiconductor samples, each laser pulse creates a surface charge that may have a radius of less than 1 nm, and this charge is rapidly dispersed by intense electrostatic repulsion. Time or frequency-domain measurements of the resulting pulse train with semiconductors, or hyperspectral measurements of the MFC with metals, may be used to determine the properties near the surface of a sample with atomic resolution.

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