Analysis on wide continuous wavelength tuning of rapid-tunable quantum-well DFB lasers with carrier-transport effects

The authors report, theoretically, the wide and rapid tuning characteristics of the enhanced-plasma effect (EPE) laser. The EPE laser is a novel wavelength tunable laser. It has a thick carrier reservoir between the p-cladding layer and the MQW active layer. Fast blue-frequency shifting, due to the plasma effect, is strikingly enhanced and exceeds the slow red-thermal-frequency drift. Continuous-wave tuning range is analyzed in consideration of the carrier transport time, the carrier lifetime in the reservoir, and heat generation owing to nonradiative recombination current. Wide continuous rapid tuning characteristics are demonstrated, theoretically. Over 10-nm continuous and rapid tuning range would he obtained by using an EPE structure. >

[1]  N. Suzuki,et al.  Simulation of enhanced plasma effect wavelength tunable lasers , 1995 .

[2]  S. Kuwano,et al.  100 ps frequency switching without bit loss for a 10 Gb/s ASK modulated signal , 1993, IEEE Photonics Technology Letters.

[3]  I. Mito,et al.  Analysis on FM efficiency of InGaAs/InGaAsP SCH-MQW LD's taking injection carrier transport into account , 1993, IEEE Photonics Technology Letters.

[4]  Niloy K. Dutta,et al.  Long wavelength semiconductor lasers , 1988, Technical Digest., International Electron Devices Meeting.

[5]  Markus-Christian Amann,et al.  Tunable twin-guide (TTG) distributed feedback (DFB) laser with over 10 nm continuous tuning range , 1993 .

[6]  Markus-Christian Amann,et al.  Excess linewidth broadening in wavelength-tunable laser diodes , 1990 .

[7]  M. Willatzen,et al.  CARRIER TEMPERATURE AND SPECTRAL HOLEBURNING DYNAMICS IN INGAASP QUANTUM WELL LASER AMPLIFIERS , 1994 .

[8]  Joel Jacquet,et al.  Thermal contribution to wavelength tunability of multielectrode DFB lasers , 1991 .

[9]  Masayuki Ishikawa,et al.  High speed quantum-well lasers and carrier transport effects , 1992 .

[10]  Masayuki Ishikawa,et al.  Long wavelength high-speed semiconductor lasers with carrier transport effects , 1992 .

[11]  T. Kikugawa,et al.  A DBR laser employing passive-section heaters, with 10.8 nm tuning range and 1.6 MHz linewidth , 1993, IEEE Photonics Technology Letters.

[12]  Hiroshi Ishikawa,et al.  Tunable, narrow-linewidth and high-power λ/4-shifted DFB laser , 1989 .