论文信息 - Benefits of negative polarization charge inn-InGaN onp-GaN single heterostructure light emitting diode withp-side down - 字舞流文

Benefits of negative polarization charge inn-InGaN onp-GaN single heterostructure light emitting diode withp-side down

M. Reed | M. Wraback | A. Usikov | V. Dmitriev | O. Kovalenkov | E. Readinger | A. Syrkin | C. Moe | H. Shen