High-k dielectrics' radiation response to X-ray and γ-ray exposure
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M. Werner | P. Chalker | M. Werner | R. Potter | C.Z. Zhao | S. Taylor | P.R. Chalker | R.J. Potter | J. Gaskell | J. Gaskell | C.Z. Zhao | S. Taylor
[1] E. P. Gusev,et al. Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacks , 2003 .
[2] F. B. McLean. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures , 1980, IEEE Transactions on Nuclear Science.
[3] T. P. Ma,et al. Ionizing radiation effects in MOS devices and circuits , 1989 .
[4] G. Bersuker,et al. Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices , 2005, IEEE Transactions on Nuclear Science.
[5] Jian-Ping Wang,et al. In situ ordering of FePt thin films with face-centered-tetragonal (001) texture on Cr100−xRux underlayer at low substrate temperature , 2002 .
[6] P. Chalker,et al. High-k materials and their response to gamma ray radiation , 2009 .
[7] J. F. Conley,et al. The radiation response of the high dielectric-constant hafnium oxide/silicon system , 2002 .
[8] Y. F. Loo,et al. Deposition of HfO2, Gd2O3 and PrOx by Liquid Injection ALD Techniques† , 2005 .
[9] peixiong zhao,et al. Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics , 2001 .