论文信息 - Observation Of Native Ga Vacancies In Gan By Positron Annihilation

Observation Of Native Ga Vacancies In Gan By Positron Annihilation

Positron annihilation experiments have been performed to identify native point defects in GaN bulk crystals as well as in epitaxial layers. The results show that Ga vacancies are present at concentrations of 10 17 – 10 18 cm −3 in undoped GaN bulk crystals and layers, whereas the Mgdoped samples are free of Ga vacancies. The Ga vacancies are negatively charged and their concentration correlates with the intensity of the yellow luminescence. We conclude that the Ga vacancies contribute to the electrical compensation of n-type GaN and their acceptor levels are involved in the yellow luminescence transition.

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