Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier

Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate have been demonstrated. An AlAs0.10Sb0.90/GaSb H-structure superlattice design was used as the large-bandgap electron-barrier in these photodetectors. The photodetector is designed to have a 100% cut-off wavelength of ∼2.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.65 A/W at 1.9 μm, corresponding to a quantum efficiency of 41% at zero bias under front-side illumination, without any anti-reflection coating. With an R × A of 78 Ω·cm2 and a dark current density of 8 × 10−3 A/cm2 under −400 mV applied bias at 300 K, the nBn photodetector exhibited a specific detectivity of 1.51 × 1010 cm·Hz1/2/W. At 150 K, the photodetector exhibited a dark current density of 9.5 × 10−9 A/cm2 and a quantum efficiency of 50%, resulting in a detectivity of 1.12 × 1013 cm·Hz1/2/W.

[1]  I. Vurgaftman,et al.  Molecular beam epitaxy growth of antimonide type-II “W” high-power interband cascade lasers and long-wavelength infrared photodiodes , 2007 .

[2]  Jerry R. Meyer,et al.  Band parameters for III–V compound semiconductors and their alloys , 2001 .

[3]  Manijeh Razeghi,et al.  Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices , 2012 .

[4]  J. Merz,et al.  GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescence , 1983 .

[5]  L. O. Bubulac,et al.  High performance SWIR HgCdTe detector arrays , 1997 .

[6]  W. Frensley,et al.  Theory of the energy-band lineup at an abrupt semiconductor heterojunction , 1977 .

[7]  Georgy G. Zegrya,et al.  Mechanism of suppression of Auger recombination processes in type-II heterostructures , 1995 .

[8]  W. Harrison.  Elementary theory of heterojunctions , 1977 .

[9]  Manijeh Razeghi,et al.  Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier , 2007 .

[10]  T. C. Mcgill,et al.  Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity , 1976 .

[11]  Manijeh Razeghi,et al.  High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1−xSbx superlattices , 2015 .

[12]  Manijeh Razeghi,et al.  High differential resistance type-II InAs∕GaSb superlattice photodiodes for the long-wavelength infrared , 2006 .

[13]  G. Wicks,et al.  nBn detector, an infrared detector with reduced dark current and higher operating temperature , 2006 .

[14]  M. Razeghi,et al.  Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer , 2011 .