Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
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[1] H. Nakashima,et al. GaAlAs buried multi-quantum-well laser fabricated by diffusion induced disordering , 1984, 1983 International Electron Devices Meeting.
[2] J. Gibbons,et al. Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model , 1984 .
[3] R. Dupuis,et al. Two-wavelength disordered quantum-well photodetector , 1988 .
[4] T. Kuroda,et al. AlGaAs Window Stripe Buried Multiquantum Well Lasers , 1985 .
[5] Temperature-dependent damage production in ion-implanted strained-layer superlattices , 1987 .
[6] N. Holonyak,et al. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion , 1983 .
[7] N. Holonyak,et al. IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity , 1981 .
[8] T. Fukunaga,et al. SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs–GaAs Superlattice , 1986 .
[9] T. Fukunaga,et al. Scan speed effects on enhanced disordering of GaAs‐AlGaAs superlattices by focused Si ion beam implantation , 1987 .
[10] D. Hurle. Solubility and point defect-dopant interactions in GaAs —I: Tellurium doping , 1979 .
[11] N. Holonyak,et al. Sensitivity of Si diffusion in GaAs to column IV and VI donor species , 1988 .
[12] Baraff,et al. Electronic structure, total energies, and abundances of the elementary point defedts in GaAs. , 1985, Physical review letters.
[13] G. R. Antell. The diffusion of silicon in gallium arsenide , 1965 .
[14] T. Fukunaga,et al. SIMS Study of Si–Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs–GaAs Superlattices , 1986 .
[15] R. Fleming,et al. X‐ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayers , 1980 .
[16] J. Epler,et al. Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity‐induced disordering , 1987 .
[17] Yoshiro Hirayama,et al. Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices , 1985 .
[18] N. Holonyak,et al. Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering , 1984 .
[19] Ulrich Gösele,et al. Diffusion of zinc in gallium arsenide: A new model , 1981 .
[20] R. L. Longini,et al. Ionization Interaction between Impurities in Semiconductors and Insulators , 1956 .
[21] O. Acher,et al. Disorder of a GaxIn1-xAsyP1-y-InP quantum well by Zn diffusion , 1987 .
[22] R. Burnham,et al. Low‐threshold disorder‐defined buried‐heterostructure AlGaAs diode lasers by anisotropic diffusion of laser‐incorporated Si , 1987 .
[23] R. Azoulay,et al. Disordering of Ga1−xAlxAs‐GaAs quantum well structures by donor sulfur diffusion , 1985 .
[24] O. Wada,et al. Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well , 1987 .
[25] H. Okamoto,et al. Defects in Ga+ Jon Implanted GaAs–AlAs MQW Structures , 1986 .
[26] A. Springthorpe,et al. Zinc‐enhanced beryllium redistribution in GaAs/GaAlAs grown by molecular beam epitaxy , 1988 .
[27] S. Dannefaer. Defects in semiconductors , 1989 .
[28] N. Holonyak,et al. Background doping dependence of silicon diffusion in p‐type GaAs , 1987 .
[29] A. Willoughby,et al. Self-Diffusion in gallium arsenide , 1983 .
[30] N. Holonyak,et al. Impurity induced layer disordering of Si implanted AlxGa1−xAs‐GaAs quantum‐well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops , 1987 .
[31] P. Petroff. Transmission electron microscopy of interfaces in III–V compound semiconductors , 1977 .
[32] Stephen J. Pearton,et al. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes , 1986 .
[33] T. Detemple,et al. Impurity‐induced disorder‐delineated optical waveguides in GaAs‐AlGaAs superlattices , 1987 .
[34] A. Misu,et al. Growth Temperature Dependence of Disorderings in a Be-Doped GaAs/AlAs Multilayered Structure , 1987 .
[35] N. Holonyak,et al. Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−x As‐GaAs quantum‐well heterostructures , 1987 .
[36] K. Kavanagh,et al. Silicon diffusion at polycrystalline‐Si/GaAs interfaces , 1985 .
[37] N. Holonyak,et al. Effect of surface encapsulation and As4 overpressure on Si diffusion and impurity-induced layer disordering in GaAs, AlxGa1-xAs, and AlxGa1-xAs-GaAs quantum well heterostructures , 1988 .
[38] J. Merz,et al. Effect of rapid thermal annealing for the compositional disordering of Si‐implanted AlGaAs/GaAs superlattices , 1987 .
[39] N. Holonyak,et al. Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum‐well heterostructure laser diodes by thermal annealing , 1983 .
[40] Thomas L. Paoli,et al. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion , 1986 .
[41] Stephen J. Pearton,et al. Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces , 1986 .
[42] F. Alexandre,et al. Influence of boron on tin induced interdiffusion in GaAs‐Ga0.72Al0.28As superlattices , 1987 .
[43] N. Holonyak,et al. Implantation disordering of AlxGa1−xAs superlattices , 1985 .
[44] H. Okamoto,et al. Compositional Disordering of GaAs-AlxGa1-xAs Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication , 1985 .
[45] J. Lee,et al. Diffusion and interdiffusion in Zn-disordered AlAs-GaAs superlattices , 1984 .
[46] N. Holonyak,et al. Impurity-induced disordering of AlxGa1−xAs-GaAs quantum well heterostructures with (Si2)x(GaAs)1−x barriers , 1987 .
[47] T. Fukunaga,et al. Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering , 1986 .
[48] N. Holonyak,et al. Low threshold planar buried heterostructure lasers fabricated by impurity‐induced disordering , 1985 .
[49] N. Holonyak,et al. Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion , 1984 .
[50] N. Holonyak,et al. Opto-electronic device structures fabricated by impurity induced disordering , 1986 .
[51] James J. Coleman,et al. Disorder of an AlAs‐GaAs superlattice by silicon implantation , 1982 .
[52] S. Pearton,et al. Annealing behavior of Ga+ implanted GaAs/AlGaAs observed by transmission electron microscopy , 1987 .
[53] Tuviah E. Schlesinger,et al. Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells , 1986 .
[54] J. P. Gowers,et al. Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth , 1987 .
[55] N. Holonyak,et al. Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering , 1986 .
[56] N. Holonyak,et al. Impurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures , 1988 .
[57] J. Allen,et al. Diffusion of Zinc in Gallium Arsenide , 1958, Nature.
[58] Y. Nannichi,et al. Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing , 1984 .
[59] H. Reiss. Chemical Effects Due to the Ionization of Impurities in Semiconductors , 1953 .
[60] T. Fukunaga,et al. Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation , 1986 .
[61] N. Holonyak,et al. Thermal‐anneal wavelength modification of multiple‐well p‐n AlxGa1−x As‐GaAs quantum‐well lasers , 1984 .
[62] D. Welch,et al. High power (2.1 W) 10‐stripe AlGaAs laser arrays with Si disordered facet windows , 1986 .
[63] G. A. Vawter,et al. Silicon diffusion into AlxGa1−xAs (x=0–0.4) from a sputtered silicon film , 1987 .
[64] N. Holonyak,et al. Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers , 1985 .
[65] Hisashi Shichijo,et al. Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si , 1988 .
[66] G. A. Vawter,et al. Closed-tube diffusion of silicon in GaAs from sputtered silicon film , 1986 .
[67] R. Burnham,et al. Low threshold buried heterostructure quantum well diode lasers by laser‐assisted disordering , 1987 .
[68] J. Harris,et al. Mechanism of compensation in heavily silicon‐doped gallium arsenide grown by molecular beam epitaxy , 1987 .
[69] Thomas L. Paoli,et al. Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity , 1986 .
[70] N. Holonyak,et al. Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures , 1988 .
[71] N. Holonyak,et al. Si‐Si pair diffusion and correlation in AlxGa1−xAs and GaAs , 1985 .
[72] T. Kuroda,et al. Device characteristics of GaAlAs buried-multiquantum-well lasers fabricated by Zn-diffusion-induced disordering , 1985 .
[73] N. Holonyak,et al. Impurity-Induced Layer Disordering in Al x Ga 1−x As-GaAs Quantum well Heterostructures - , 1988 .
[74] J. Harbison,et al. Kinetics of silicon‐induced mixing of AlAs‐GaAs superlattices , 1987 .
[75] T. Kim,et al. Complex Compensation of Ge Pulse‐Diffused into GaAs , 1987 .
[76] G. L. Pearson,et al. Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAs☆ , 1975 .
[77] G. L. Pearson,et al. Gas phase equilibria in the system Ga-As-Zn. , 1967 .
[78] L. Vieland. The effect of arsenic pressure on impurity diffusion in gallium arsenide , 1961 .
[79] C. B. Carter,et al. Defect structure and intermixing of ion-implanted AlxGa1−xAs/GaAs superlattices , 1986 .
[80] A. Willoughby,et al. Self‐Diffusion of Gallium in Gallium Arsenide , 1981 .
[81] P. Hutchinson,et al. The nature of defects in n gallium arsenide , 1974 .
[82] P. J. Caldwell,et al. Embedded‐mirror semiconductor laser , 1984 .
[83] D. Shaw. Atomic diffusion in semiconductors , 1973 .
[84] N. Holonyak,et al. Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers , 1986 .
[85] T. Takamori,et al. Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation , 1987 .
[86] N. Holonyak,et al. Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array , 1987 .
[87] H. Craighead,et al. Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures , 1986 .
[88] C. Hwang. Optical Properties of n‐Type GaAs. III. Relative Band‐Edge Recombination Efficiency of Si‐ and Te‐Doped Crystals before and after Heat Treatment , 1969 .
[89] B. Goldstein. Diffusion in Compound Semiconductors , 1961 .
[90] Y. Arakawa,et al. Process dependence of AlAs/GaAs superlattice mixing induced by silicon implantation , 1987 .
[91] H. Okamoto,et al. Fabrication of GaAlAs 'window-stripe' multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying , 1984 .
[92] H. Goldsmid,et al. DIffusion in Semiconductors , 1970 .
[93] Akira Furuya,et al. AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering , 1987 .
[94] N. Holonyak,et al. Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices , 1985 .
[95] N. Holonyak,et al. Coupled stripe AlxGa1−xAs‐GaAs quantum well lasers defined by impurity‐induced (Si) layer disordering , 1987 .
[96] J. Allen. The diffusion of ionized impurities in semiconductors , 1960 .
[97] Rustum Roy,et al. Materials Research Society , 1984 .
[98] Robert D. Burnham,et al. Impurity-disordered, coupled-stripe Al(x)Ga(1-x)As-GaAs quantum well laser , 1985 .
[99] B. Goldstein. Diffusion of Cadmium and Zinc in Gallium Arsenide , 1960 .
[100] W. Shockley,et al. Solubility of Flaws in Heavily-Doped Semiconductors , 1960 .
[101] J. Harbison,et al. Comparative studies of ion-induced mixing of GaAs-AlAs superlattices , 1988 .
[102] C. D. Thurmond. The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP , 1975 .
[103] Y. Nannichi,et al. Effects of Be and Si on disordering of the AlAs/GaAs superlattice , 1985 .
[104] Constantin Halatsis,et al. Performance of crossbar interconnection networks in presence of ‘hot spots’ , 1988 .
[105] H. Craighead,et al. Aluminum ion‐implantation enhanced intermixing of GaAs‐AlGaAs quantum‐well structures , 1988 .
[106] J. R. Manning,et al. Diffusion Kinetics for Atoms in Crystals , 1968 .
[107] T. S. Moss,et al. Handbook on semiconductors , 1980 .
[108] P. Ho,et al. Raman scattering study of disordering and alloying of GaAs‐AlAs superlattice by As implantation and rapid thermal annealing , 1986 .
[109] N. Holonyak,et al. Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering , 1986 .
[110] U. Gösele,et al. Mechanisms of doping‐enhanced superlattice disordering and of gallium self‐diffusion in GaAs , 1988 .
[111] C. D. Thurmond,et al. Entropy of ionization and temperature variation of ionization levels of defects in semiconductors , 1976 .
[112] A. Yariv,et al. Dose‐dependent mixing of AlAs‐GaAs superlattices by Si ion implantation , 1986 .
[113] S. W. Kirchoefer,et al. Zn diffusion and disordering of an AlAs-GaAs superlattice along its layers , 1982 .
[114] N. Holonyak,et al. Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering , 1985 .
[115] N. Holonyak,et al. Buried heterostructure AlxGa1−xAs‐GaAs quantum well lasers by Ge diffusion from the vapor , 1988 .
[116] Robert D. Burnham,et al. Donor‐induced disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum‐well lasers , 1985 .
[117] N. Nachtrieb,et al. The chemistry of imperfect crystals , 1973 .
[118] I. J. Fritz,et al. Zinc‐implantation‐disordered (InGa)As/GaAs strained‐layer superlattice diodes , 1986 .
[119] Y. Kawamura,et al. Zn‐diffusion‐induced intermixing of InGaAs/InP multiple quantum well structures , 1988 .
[120] N. Holonyak,et al. Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures , 1982 .
[121] D. Welch,et al. Buried heterostructure lasers by silicon implanted, impurity induced disordering , 1987 .
[122] G. L. Pearson,et al. Diffusion of zinc in gallium arsenide under excess arsenic pressure. , 1967 .
[123] B. Streetman,et al. Study of Encapsulants for Annealing GaAs , 1977 .
[124] S. Bedair,et al. Disorder of an InxGa1−xAs‐GaAs superlattice by Zn diffusion , 1983 .
[125] L. L. Chang,et al. Interdiffusion between GaAs and AlAs , 1976 .
[126] Y. J. Yang,et al. Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering , 1986 .
[127] N. Holonyak,et al. Layer interdiffusion in Se‐doped AlxGa1−xAs‐GaAs superlattices , 1987 .
[128] G. Jenkins,et al. Electrical and electron microscope studies of the annealing of tellurium-doped gallium arsenide , 1971 .
[129] J. V. Vechten,et al. Intermixing of an AlAs‐GaAs superlattice by Zn diffusion , 1982 .
[130] U. Gösele,et al. Destruction mechanism of III‐V compound quantum well structures due to impurity diffusion , 1987 .
[131] N. Holonyak,et al. Thermal annealing and photoluminescence measurements on AlxGa1−xAs‐GaAs quantum‐well heterostructures with Se and Mg sheet doping , 1987 .
[132] Karl Hess,et al. Disorder of an AlAs‐GaAs superlattice by impurity diffusion , 1981 .
[133] K. Ishida,et al. Cross Sectional Transmission Electron Microscopy of Zn Diffusion Induced Disordering of GaAlAs-GaAs Multiquantum-Well Structures , 1985 .
[134] Thomas L. Paoli,et al. Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source , 1987 .
[135] T. Kuroda,et al. AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window Facet , 1985 .
[136] Be‐implantation doping of GaAsxP1−x/GaP strained‐layer superlattices , 1984 .
[137] H. Okamoto,et al. Interdiffusion of Al and Ga in Si-Implanted GaAs–AlAs Superlattices , 1984 .
[138] N. Holonyak,et al. Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers , 1985 .
[139] R. L. Longini. Rapid zinc diffusion in gallium arsenide , 1962 .
[140] N. Holonyak,et al. Impurity induced disordering of strained GaP‐GaAs1−xPx(x∼0.6) superlattices , 1983 .