Temperature dependence of Raman scattering in single crystal GaN films

Micro-Raman scattering from single crystal GaN films, both free-standing and attached to Al2O3 substrates, was performed over the temperature range from 78 to 800 K. These measurements reveal that the Raman phonon frequency decreases and the linewidth broadens with increasing temperature. This temperature dependence is well described by an empirical relationship which has proved to be effective for other semiconductors. The experiments also demonstrate that the strain from Al2O3 substrates compresses the epitaxial GaN in the c-axis direction.

[1]  T. R. Hart,et al.  Temperature Dependence of Raman Scattering in Silicon , 1970 .

[2]  S. Nakamura,et al.  Thermal Annealing Effects on P-Type Mg-Doped GaN Films , 1992 .

[3]  H. Morkoç,et al.  GaN, AlN, and InN: A review , 1992 .

[4]  Manuel Cardona,et al.  Light Scattering in Solids , 2000 .

[5]  Grimsditch,et al.  Raman scattering in diamond up to 1900 K. , 1991, Physical review. B, Condensed matter.

[6]  J. Shealy,et al.  Investigation by Raman scattering of the properties of III‐V compound semiconductors at high temperature , 1987 .

[7]  Thermal stability of GaN investigated by Raman scattering , 1998 .

[8]  S. Nakamura,et al.  Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .

[9]  Jingbiao Cui,et al.  Noncontact temperature measurements of diamond by Raman scattering spectroscopy , 1998 .

[10]  Shuji Nakamura,et al.  Polarized Raman spectra in GaN , 1995 .

[11]  Suski,et al.  Raman-scattering studies of aluminum nitride at high pressure. , 1993, Physical review. B, Condensed matter.

[12]  Klaus Lischka,et al.  Comparative Raman studies of cubic and hexagonal GaN epitaxial layers , 1996 .

[13]  Jose Menendez,et al.  Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects , 1984 .

[14]  J. Zolper,et al.  Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials , 1997 .

[15]  Hadis Morkoç,et al.  Thermal stability of GaN investigated by low‐temperature photoluminescence spectroscopy , 1993 .

[16]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[17]  M. Balkanski,et al.  Anharmonic effects in light scattering due to optical phonons in silicon , 1983 .

[18]  Baroni,et al.  Anharmonic Phonon Lifetimes in Semiconductors from Density-Functional Perturbation Theory. , 1995, Physical review letters.