Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

[1]  Michael Woodhouse,et al.  Technology advances needed for photovoltaics to achieve widespread grid price parity , 2016 .

[2]  T. Buonassisi,et al.  Utilization of Tabula Rasa to stabilize bulk lifetimes in n-Cz silicon for high-performance solar cell processing , 2016, 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).

[3]  Y. Veschetti,et al.  Solar‐grade boron emitters by BF3 plasma doping and role of the co‐implanted fluorine , 2016 .

[4]  R. Reedy,et al.  Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells , 2016 .

[5]  Miro Zeman,et al.  Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells , 2016 .

[6]  Benjamin G. Lee,et al.  Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells , 2015 .

[7]  H. Osten,et al.  Ion implantation of boric molecules for silicon solar cells , 2015 .

[8]  Robby Peibst,et al.  Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells , 2015, IEEE Journal of Photovoltaics.

[9]  R. Müller,et al.  Ion implantation into amorphous Si layers to form carrier‐selective contacts for Si solar cells , 2014 .

[10]  B. Lim,et al.  Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions , 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

[11]  L. Ho,et al.  Diffusion of Boron near Projected Ranges of B and BF2 Ions Implanted in Silicon , 2008 .

[12]  V. Fiorentini,et al.  Fluorine in Si: Native-defect complexes and the suppression of impurity diffusion , 2005 .

[13]  P. Chu.  Semiconductor applications of plasma immersion ion implantation , 2003 .

[14]  R. Falster,et al.  Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation , 1999 .

[15]  R. Falster,et al.  Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si , 1997 .

[16]  W. Warta,et al.  Impact of metallization techniques on 20% efficient silicon solar cells , 1991, The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.

[17]  M. Green,et al.  Surface damage caused by electron-beam metallization of high open-circuit voltage solar cells , 1984, IEEE Electron Device Letters.

[18]  R. Reedy,et al.  Interdigitated Back Passivated Contact (IBPC) Solar Cells Formed by Ion Implantation , 2016, IEEE Journal of Photovoltaics.

[19]  J. Benick,et al.  Ion Implantation for All-alumina IBC Solar Cells with Floating Emitter , 2014 .

[20]  S. Glunz,et al.  Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics , 2014 .

[21]  S. Felch,et al.  Ion Implantation for Semiconductor Devices: The Largest Use of Industrial Accelerators , 2013 .

[22]  Jan Benick,et al.  High quality ion implanted boron emitters in an interdigitated back contact solar cell with 20% efficiency , 2011 .

[23]  R. M. Swanson,et al.  Measurement of the emitter saturation current by a contactless photoconductivity decay method , 1985 .