Observation of stress effects on GaAs at the interface of molecular beam epitaxy grown ZnSe/GaAs(100) heterostructures

[1]  H. Sitter,et al.  Optical and structural properties of ZnSe/GaAs interfaces , 1997 .

[2]  Lastras-Martínez.  Reflectance anisotropy of GaAs(100): Dislocation-induced piezo-optic effects. , 1996, Physical review. B, Condensed matter.

[3]  G. Wong,et al.  Interface states of ZnSe/GaAs interface , 1996 .

[4]  L. F. Lastras-Martínez,et al.  Dislocation-induced effects in the reflectance-difference spectrum of semi-insulating GaAs (100) , 1996 .

[5]  Seong-Il Kim,et al.  Strain and critical layer thickness analysis of carbon-doped GaAs , 1996 .

[6]  B. Gil,et al.  Optical studies in ZnSeGaAs epilayers: Fabry-Perot modes in the upper branch of the polariton , 1996 .

[7]  Faquir C. Jain,et al.  X-ray determination of the dislocation densities in semiconductor crystals using a Bartels five-crystal diffractometer , 1995 .

[8]  A. Naumov,et al.  Relaxation process and luminescence of lattice defects in epitaxially grown {ZnSe}/{GaAs} layers , 1995 .

[9]  Gil,et al.  Observation of Fabry-Pérot modes in the upper branch of the polariton in ZnSe-GaAs epilayers. , 1995, Physical review. B, Condensed matter.

[10]  Greene,et al.  Temperature-dependent optical band gap of the metastable zinc-blende structure beta -GaN. , 1994, Physical review. B, Condensed matter.

[11]  L. L. Chang,et al.  Structural quality and the growth mode in epitaxial ZnSe/GaAs(100) , 1993 .

[12]  A. Nurmikko,et al.  ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications , 1992 .

[13]  K. Han,et al.  Characterization of ZnSe/GaAs heterostructure using transverse acoustoelectric voltage spectroscopy , 1992 .

[14]  M. Tamargo,et al.  Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy , 1991 .

[15]  J. E. Potts,et al.  Study of the interface of undoped and p‐doped ZnSe with GaAs and AlAs , 1990 .

[16]  Olego Dj.  Band bendings, band offsets, and interface instabilities in p+-GaAs/n--ZnSe heterojunctions. , 1989 .

[17]  Yamazaki,et al.  Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers. , 1988, Physical review. B, Condensed matter.

[18]  S. Ghandhi,et al.  Improved photoluminescence of GaAs in ZnSe/GaAs heterojunctions grown by organometallic epitaxy , 1988 .

[19]  D. Olego.  Effects of ZnSe epitaxial growth on the surface properties of GaAs , 1987 .

[20]  T. Yao,et al.  The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs , 1987 .

[21]  T. Yao,et al.  Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs , 1986 .

[22]  Kuniaki Tanaka,et al.  Growth of low-resistivity high-quality ZnSe, ZnS films by low-pressure metalorganic chemical vapour deposition , 1985 .

[23]  H. Presting,et al.  Deformation Potentials of k = 0 States of Tetrahedral Semiconductors , 1984, November 1.

[24]  David E. Aspnes,et al.  Third-derivative modulation spectroscopy with low-field electroreflectance , 1973 .