Bulk FinFET EOT Extraction from Accumulation Capacitance Measurements

In this paper, a new method for equivalent oxide thickness extraction from accumulation capacitance measurements is proposed, which is suitable for fully depleted channels with a body contact such as bulk fin field-effect transistor (FinFET) devices. First, the limitation of the previous approaches reported in the literature is discussed. A new implicit relationship between the semiconductor charge and the surface potential taking into account the increase in the sub-band energies above the conduction/valence band edge is proposed and utilized as a basis for the new extraction method. The efficiency of this method is tested through experimental measurements on a FinFET capacitance and TCAD simulations.

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