Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

We have observed the frequency dependence of the plasma resonant intensity in the terahertz range for a short gate-length InGaP∕InGaAs∕GaAs pseudomorphic high-electron-mobility transistor. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beam. Under sufficient density of two-dimensional (2D) conduction electrons (>1012cm−2) and a moderate modulation index (the ratio of the density of photoexcited electrons to the initial density of the 2D electrons) we clearly observed the plasma-resonant peaks at 1.9 and 5.8THz corresponding to the fundamental and third-harmonic resonance at room temperature, which is in good agreement with theory.

[1]  K. Takahata,et al.  Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light , 1999 .

[2]  M. Shur,et al.  Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors , 2002 .

[3]  Michael S. Shur,et al.  Terahertz sources and detectors using two-dimensional electronic fluid in high electron-mobility transistors , 2000 .

[4]  M. Shur,et al.  Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid , 1996 .

[5]  M. Shur,et al.  Terahertz photomixing in quantum well structures using resonant excitation of plasma oscillations , 2002 .

[6]  Tatsuya Hirose,et al.  A flip-chip MMIC design with coplanar waveguide transmission line in the W-band , 1998 .

[7]  Taiichi Otsuji,et al.  Effect of Heterostructure2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors , 2003 .

[8]  T. Otsuji,et al.  Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources , 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561).

[9]  M. Shur,et al.  Terahertz detector utilizing two-dimensional electronic fluid , 1998, IEEE Electron Device Letters.

[10]  Shur,et al.  Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current. , 1993, Physical review letters.

[11]  Michael S. Shur,et al.  Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions , 2004 .

[12]  John L. Reno,et al.  Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors , 2002 .