Improving MOCVD MoS2 Electrical Performance: Impact of Minimized Water and Air Exposure Conditions

The effects of oxidants both in the channel and contact regions of MoS2 transistors are discussed through a systematic experimental study. This letter highlights the issues of partial instability in metal-organic chemical vapor deposition MoS2 and proposes a procedure, which considerably improves the electrical characteristics of back-gated transistors. By avoiding ambient exposure and layer oxidation, contact resistance can be reduced and intrinsic mobility increased by 50%.

[1]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[2]  Bin Liu,et al.  Hysteresis in single-layer MoS2 field effect transistors. , 2012, ACS nano.

[3]  Xinran Wang,et al.  Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances , 2012 .

[4]  Jing Kong,et al.  Intrinsic structural defects in monolayer molybdenum disulfide. , 2013, Nano letters.

[5]  Daniele Chiappe,et al.  Hindering the Oxidation of Silicene with Non‐Reactive Encapsulation , 2013 .

[6]  Baoshun Zhang,et al.  Scaling behavior of hysteresis in multilayer MoS2 field effect transistors , 2014 .

[7]  Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2 , 2014, ACS nano.

[8]  Shanshan Yao,et al.  Surface-energy-assisted perfect transfer of centimeter-scale monolayer and few-layer MoS₂ films onto arbitrary substrates. , 2014, ACS nano.

[9]  R. Wallace,et al.  Surface oxidation energetics and kinetics on MoS2 monolayer , 2015 .

[10]  Andres Castellanos-Gomez,et al.  Environmental instability of few-layer black phosphorus , 2014, 1410.2608.

[11]  Pinshane Y. Huang,et al.  High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity , 2015, Nature.

[12]  Changgu Lee,et al.  Work function variation of MoS2 atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules , 2015 .

[13]  Fengnian Xia,et al.  Recent Advances in Two-Dimensional Materials beyond Graphene. , 2015, ACS nano.

[14]  Junsong Yuan,et al.  Exploring atomic defects in molybdenum disulphide monolayers , 2015, Nature Communications.

[15]  J. Su,et al.  Effect of vacancies in monolayer MoS2 on electronic properties of Mo–MoS2 contacts , 2015 .

[16]  Yao Guo,et al.  The intrinsic origin of hysteresis in MoS2 field effect transistors. , 2016, Nanoscale.

[17]  Christopher M. Smyth,et al.  Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance , 2016 .

[18]  Eric Pop,et al.  Approaching ballistic transport in monolayer MoS2 transistors with self-aligned 10 nm top gates , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[19]  N. Koratkar,et al.  Aging of Transition Metal Dichalcogenide Monolayers. , 2016, ACS nano.

[20]  N. Bhat,et al.  Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability , 2015, IEEE Transactions on Electron Devices.

[21]  Zhihao Yu,et al.  Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016) , 2016, Advanced materials.

[22]  S. Khondaker,et al.  Bandgap Engineering of MoS2 Flakes via Oxygen Plasma: A Layer Dependent Study , 2016 .

[23]  Hua Zhang,et al.  Two-dimensional semiconductors for transistors , 2016 .

[24]  I. Radu,et al.  Insight on the Characterization of MoS2 Based Devices and Requirements for Logic Device Integration , 2016 .

[25]  A. Tiwari,et al.  Atomically Thin MoS2: A Versatile Nongraphene 2D Material , 2016 .

[26]  M. Terrones,et al.  Defect engineering of two-dimensional transition metal dichalcogenides , 2016 .

[27]  R. Yu,et al.  Two-Dimensional Transition Metal Dichalcogenides as Atomically Thin Semiconductors: Opportunities and Challenges , 2016 .

[28]  Hyoung Won Baac,et al.  Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors , 2016 .

[29]  Jia-Min Shieh,et al.  MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability , 2016, 2016 IEEE Symposium on VLSI Technology.

[30]  Jae-Hyuk Ahn,et al.  Ambient effects on electrical characteristics of CVD-grown monolayer MoS2 field-effect transistors , 2017, Scientific Reports.

[31]  M. Otyepka,et al.  Is Single Layer MoS2 Stable in the Air? , 2017, Chemistry.

[32]  Yi Wang,et al.  Modulation doping of transition metal dichalcogenide/oxide heterostructures , 2017 .

[33]  Hyunyong Choi,et al.  Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment. , 2017, Nanoscale.