Structural and optical properties of CuInS2 bulk crystals

The optical properties of CuInS2 bulk crystals were studied by photoreflectance (PR) and photoluminescence (PL) spectroscopy in comparison with the material structure, verified by energy dispersive x‐ray (EDX) microprobe analysis and x‐ray diffraction. The samples have been produced by the gradient freeze technique under different sulfur pressures. It was shown by EDX that growth‐induced cracking along the ingot is strongly reduced with higher sulfur pressures. The PR spectra at 80 K exhibit two well‐resolved transitions. From a comparison with the reflectivity spectra at 80 K, these transitions are explained by the presence of two Wannier excitons. The fit of the spectra yields a broadening parameter of the lower‐energy transition which increases approximately linearly with increasing Cu/In ratio. Thus, it is deduced that PR is sensitive to small inhomogeneities in the molecularity of the compound. In agreement with the EDX data photoluminescence indicates the material to be Cu rich. However, a continuou...

[1]  N. Dietz,et al.  Phase Relations in the Cu‐In‐S System and Growth of Large CuInS2 Single Crystals , 1992 .

[2]  H. Hwang,et al.  Photoreflectance of sulfur-annealed copper indium disulfide , 1990 .

[3]  S. Fiechter,et al.  Efficient solar energy conversion with CuInS2 , 1986, Nature.

[4]  T. Hsu Study of CuInS2 grown by the traveling‐heater method by electrolyte electroreflectance , 1986 .

[5]  H. Hwang,et al.  A novel method to grow large CuInS2 single crystals , 1984 .

[6]  James W. Garland,et al.  Comparative Study of Defects in Semiconductors by Electrolyte Electroreflectance and Spectroscopic Ellipsometry , 1984 .

[7]  H. Hwang,et al.  Modulation reflectance spectra of CuInS2 , 1983 .

[8]  H. Wiedemeier,et al.  Mass spectrometric studies of the Decomposition and the Heat of Formation of CuInS2(s) , 1983 .

[9]  J. Bloem,et al.  Luminescence of CuInS2 , 1982 .

[10]  L. J. Giling,et al.  Phase relations in the system Cu2S-In2S3 , 1980 .

[11]  J. Groenink,et al.  A Generalized Approach to the Defect Chemistry of Ternary Compounds , 1978 .

[12]  J. L. Queisser,et al.  Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications , 1976 .

[13]  F. Evangelisti,et al.  Dependence of exciton reflectance on field and other surface characteristics: The case of InP , 1974 .

[14]  David E. Aspnes,et al.  Third-derivative modulation spectroscopy with low-field electroreflectance , 1973 .

[15]  F. Evangelisti,et al.  Electro-optical effects at the discrete and continuum exciton states in GaAs , 1973 .

[16]  B. Tell,et al.  Electrical Properties, Optical Properties, and Band Structure of CuGaS 2 and CuInS 2 , 1971 .

[17]  W. Albers Screening of Bound-State Excitons in Modulated Reflectance , 1969 .

[18]  J. Loferski,et al.  Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy Conversion , 1956 .