论文信息 - Random telegraph noise in flash memories - model and technology scaling

Random telegraph noise in flash memories - model and technology scaling

This paper presents the first statistical model of Vt fluctuation (ΔVtcell) in a floating-gate flash memory due to random telegraph noise. It considers current-path percolation, which generates a large-amplitude-noise tail, caused by dopant induced surface potential non-uniformity It concludes that the impact of scaling is weaker than the widely-accepted 1/LeffWeff trend. 3-σ ΔVtcell is estimated to increase by 1.8x rather than ≫10x from 90 nm to 20 nm technology nodes.

C. Hu | M. Kamoshida | K. Fukuda | Y. Shimizu | K. Amemiya

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