Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer
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R. M. Frazier | J. Chyi | F. Ren | S. Pearton | G. Thaler | C. Abernathy | J. Zavada | M. Overberg | R. Wilson | A. Polyakov | A. Govorkov | Chien-Chieh Lee | N. Smirnov | J. Kim