128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC) and cost savings from an improved architecture and tightly packed peripheral circuits. Air gap [2,3] technology further improves write throughput by reducing neighbor interference and WL RC. A toggle mode 400Mb/s I/O interface reduces system overhead and enhances overall performance.

[1]  Yan Li,et al.  A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[2]  Yan Li,et al.  A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate , 2009, IEEE Journal of Solid-State Circuits.

[3]  Khanh Nguyen,et al.  A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[4]  Sungki Park,et al.  Air-Gap Application and Simulation Results for Low Capacitance in 60nm NAND Flash Memory , 2007, 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.

[5]  Massimo Rossini,et al.  A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).