Low-frequency 1/f noise in graphene devices.

Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to the development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its two-dimensional structure and widely tunable two-dimensional carrier concentration. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency noise in this material system. Here, the characteristic features of 1/f noise in graphene and few-layer graphene are reviewed, and the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors are examined.

[1]  Alexander A. Balandin,et al.  Graphene thickness-graded transistors with reduced electronic noise , 2012 .

[2]  Dong Yan,et al.  Flicker Noise in Bilayer Graphene Transistors , 2009, IEEE Electron Device Letters.

[3]  C. Beenakker,et al.  Sub-Poissonian shot noise in graphene. , 2006, Physical review letters.

[4]  M. Shur,et al.  Low frequency noise in degenerate semiconductors , 2001 .

[5]  V. I. Kozub,et al.  Low-frequency noise due to site energy fluctuations in hopping conductivity , 1996 .

[6]  Qiang Li,et al.  Suspended graphene sensors with improved signal and reduced noise. , 2010, Nano letters.

[7]  V. Kozub,et al.  Disorder-Induced Low-Frequency Noise in Small Systems: Point and Tunnel Contacts in the Normal and Superconducting State , 1989 .

[8]  Arindam Ghosh,et al.  Ultralow noise field-effect transistor from multilayer graphene , 2009, 0905.4485.

[9]  Arindam Ghosh,et al.  Resistance noise in electrically biased bilayer graphene. , 2008, Physical review letters.

[10]  Kang L. Wang,et al.  Enhanced conductance fluctuation by quantum confinement effect in graphene nanoribbons. , 2010, Nano letters (Print).

[11]  Michael S. Shur,et al.  Reduction of 1/f noise in graphene after electron-beam irradiation , 2013 .

[12]  Kang L. Wang,et al.  Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene. , 2010, Nano letters.

[13]  C. G. Kang,et al.  Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices , 2012 .

[14]  K. Mohanram,et al.  Graphene Ambipolar Multiplier Phase Detector , 2011, IEEE Electron Device Letters.

[15]  M. Rooks,et al.  Graphene nano-ribbon electronics , 2007, cond-mat/0701599.

[16]  Cees Dekker,et al.  Charge noise in graphene transistors. , 2010, Nano letters.

[17]  H. Happy,et al.  Characterization and Modeling of Graphene Transistor Low-Frequency Noise , 2012, IEEE Transactions on Electron Devices.

[18]  R. Voss,et al.  ‘1/fnoise’ in music and speech , 1975, Nature.

[19]  Electrical and noise characteristics of graphene field-effect transistors , 2011 .

[20]  M. Shur,et al.  Selective gas sensing with a single pristine graphene transistor. , 2012, Nano letters.

[21]  Hsiang,et al.  Theory and experiment on the 1/f gamma noise in p-channel metal-oxide-semiconductor field-effect transistors at low drain bias. , 1986, Physical review. B, Condensed matter.

[22]  Raoul Pettai.  Noise in Receiving Systems , 1984 .

[23]  A. Mircea,et al.  1/ƒ noise: Still a surface effect , 1972 .

[24]  Zhongqing Wei,et al.  Reduced graphene oxide molecular sensors. , 2008, Nano letters.

[25]  F. Hooge.  1/ƒ noise is no surface effect , 1969 .

[26]  Xu Du,et al.  Mobility-dependent low-frequency noise in graphene field-effect transistors. , 2011, ACS nano.

[27]  A. Morpurgo,et al.  Shot noise suppression and hopping conduction in graphene nanoribbons , 2010, 1005.4403.

[28]  Thomas Szkopek,et al.  Low-frequency noise and hysteresis in graphene field-effect transistors on oxide S.A. , 2010 .

[29]  J. Bernamont,et al.  Fluctuations de potentiel aux bornes d'un conducteur métallique de faible volume parcouru par un courant , 1937 .

[30]  Arindam Ghosh,et al.  Microscopic mechanism of 1/f noise in graphene: role of energy band dispersion. , 2011, ACS nano.

[31]  Kang L. Wang,et al.  Low-noise submicron channel graphene nanoribbons , 2010 .

[32]  M. Shur,et al.  LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES , 2011 .

[33]  M. S. Keshner.  1/f noise , 1982, Proceedings of the IEEE.

[34]  R. Schoelkopf,et al.  The radio-frequency single-electron transistor (RF-SET): A fast and ultrasensitive electrometer , 1998, Science.

[35]  Zeynep Celik-Butler,et al.  Spectral dependence of 1ƒγ noise on gate bias in n-MOSFETS , 1987 .

[36]  K. Novoselov,et al.  Detection of individual gas molecules adsorbed on graphene. , 2006, Nature materials.

[37]  Zimmerman,et al.  Volume versus surface origin of 1/f noise in metals. , 1986, Physical review. B, Condensed matter.

[38]  M. Levinshtein,et al.  On the Hooge relation in semiconductors and metals , 2009 .

[39]  Cheryl Surman,et al.  Materials and transducers toward selective wireless gas sensing. , 2011, Chemical reviews.

[40]  Michael S. Shur,et al.  Origin of 1/f noise in graphene multilayers: Surface vs. volume , 2013 .

[41]  Alexander A. Balandin,et al.  Noise and Fluctuations Control in Electronic Devices , 2002 .

[42]  Alexander A. Balandin,et al.  Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications , 1999 .

[43]  F. Schwierz.  Graphene transistors. , 2010, Nature nanotechnology.

[44]  D L Gilden,et al.  1/f noise in human cognition. , 1995, Science.

[45]  L. DiCarlo,et al.  Shot noise in graphene. , 2007, Physical review letters.

[46]  D. Fleetwood,et al.  1/f noise in platinum films and ultrathin platinum wires: evidence for a common, bulk origin , 1983 .

[47]  B. I. Shklovskii.  1/f noise in variable range hopping conduction , 2003 .

[48]  D. Jena,et al.  Electrical Noise and Transport Properties of Graphene , 2013 .

[49]  A. Morpurgo,et al.  Shot noise measurements in graphene , 2009 .

[50]  Guangyu Xu,et al.  Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications , 2013, Proceedings of the IEEE.

[51]  F. T. Vasko,et al.  Generation and recombination processes via acoustic phonons in disordered graphene , 2011, 1107.2708.

[52]  J. Johnson,et al.  The Schottky Effect in Low Frequency Circuits , 1925 .

[53]  Klaus Kern,et al.  Contact and edge effects in graphene devices. , 2008, Nature nanotechnology.

[54]  A. Golub,et al.  Shot noise in graphene with long-range Coulomb interaction and local Fermi distribution , 2009, 0908.0071.

[55]  I. Flinn.  Extent of the 1/f Noise Spectrum , 1968, Nature.

[56]  Observation of the memory steps in graphene at elevated temperatures , 2011, 1101.3605.

[57]  Cor Claeys,et al.  On the flicker noise in submicron silicon MOSFETs , 1999 .

[58]  Alexander A. Balandin,et al.  Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors , 1999 .

[59]  F. N. Hooge,et al.  1/f noise , 1976 .

[60]  R. Kingston,et al.  Semiconductor surface physics , 1957 .

[61]  Low-frequency noise in graphene field-effect transistors , 2011, 2011 21st International Conference on Noise and Fluctuations.

[62]  Andre K. Geim,et al.  The rise of graphene. , 2007, Nature materials.

[63]  Philip Kim,et al.  Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements. , 2011, Nano letters.

[64]  P. M. Horn,et al.  Low-frequency fluctuations in solids: 1/f noise , 1981 .

[65]  P. Avouris,et al.  Strong suppression of electrical noise in bilayer graphene nanodevices. , 2008, Nano letters.