The new generation electron‐beam lithography system EL‐4 is described, designed for direct wafer exposure as well as optical reticle and x‐ray mask making. The new architecture features control through workstations and local area network communication between these and the microprocessor‐controlled subsystems. The system has on‐line error checking and diagnostics. Wafers up to 200 mm diam are handled individually with a Standard Mechanical InterFace‐compatible, fully robotic system, and are electrostatically chucked to the stage. Reticles are clamped to the stage with double‐sided e/s chucks, ring‐bonded membrane masks are kinematically held in a carrier chucked to the stage. The reticle/mask maker has an internal temperature control system in addition to the clean‐room climate control for the entire mechanical hardware. The electron optics accommodate triangle as well as rectangle spot formation, and for direct write application a throughput‐enhancing third level in the deflection hierarchy. High resolut...