Influence of F + Co-Implants on EOR Defect Formation in B + -Implanted, Ultrashallow Junctions

We studied the influence of energy and fluence of a F + implantation on the end-of-range (EOR) defects and on B activation in Ge + -preamorphized Si. After F + co-implantation at either 10 or 22 keV, B transient-enhanced diffusion as well as B electrical deactivation are both reduced. In contrast, 10 keV F + implantation does not affect the EOR evolution, while defects are stabilized after 22 keV F + implantation. Our results, therefore, show that the beneficial effects related to F + co-implantation cannot be explained in terms of a stabilization of the EOR defects.

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