High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates

We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202¯1¯) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

[1]  Mathew C. Schmidt,et al.  High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates , 2010 .

[2]  H. A. Schmitt,et al.  COMMENT: Comment on 'Application of spinor symmetry to 131,133Xe and 135Ba' , 1988 .

[3]  James S. Speck,et al.  Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes , 2011 .

[4]  C. Weisbuch,et al.  Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. , 2013, Physical review letters.

[5]  M. Craford,et al.  Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting , 2007, Journal of Display Technology.

[6]  Harvey B. Serreze,et al.  Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m , 1993 .

[7]  Nobuhiro Saga,et al.  Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates , 2010 .

[8]  H. Ryu,et al.  Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer , 2009 .

[9]  James S. Speck,et al.  Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates , 2013 .

[10]  Masao Ikeda,et al.  Degradation of GaN-based high-power lasers and recent advancements , 2005, SPIE OPTO.

[11]  James S. Speck,et al.  AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes , 2007, 69th Device Research Conference.

[12]  C. Granqvist,et al.  Transparent and conducting ITO films: new developments and applications , 2002 .

[13]  James W. Raring,et al.  High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes , 2010, OPTO.

[14]  James S. Speck,et al.  Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes , 2013 .

[15]  A. Lell,et al.  Development of AlInGaN based blue–violet lasers on GaN and SiC substrates , 2006 .

[16]  S. Nakamura,et al.  Thermal Annealing Effects on P-Type Mg-Doped GaN Films , 1992 .

[17]  Patrick Rinke,et al.  Determination of Internal Loss in Nitride Lasers from First Principles , 2010 .

[18]  Thomas Elsaesser,et al.  Catastrophic optical damage at front and rear facets of diode lasers , 2010 .