DUV scanning exposure systems have been steadily gaining market acceptance for the past five years, and soon, all major suppliers will offer 248-nm scanning tools. One of the major reasons for the emergence of this technology has been the purported improvement in critical dimension (CD) uniformity across the scanned field versus what can be realized in a full field stepper. Using high precision electrical resistance CD metrology, we have characterized the across field CD control capability of several DUV scanning tools and DUV steppers. Analysis is carried out through focus for multiple linetypes representing various orientations and nearest-neighbor proximities. Where possible, different NA/(sigma) combinations are examined as well. Surprisingly good full field sub-0.20 micrometers CD control is obtained even for 0.50 NA, and higher NA allows for non zero process latitude at 0.14 micrometers geometries. While it was initially anticipated that 193 nm ArF lithography would be required for 0.18 micrometers technology manufacturing, it has become apparent that 248 nm lithography will be employed for these groundrules, particularly for logic applications with predominantly semi-isolated features.