MOST's at cryogenic temperatures

Abstract Characteristics of MOST devices have been studied at 4°K and some types of device were found to be suitable for use in cryogenic amplifiers giving a variation of only 1 2 dB in gain over the audio frequency range. Capacitance measurements at room temperature enabled severe non-ohmic effects observed in some devices to be attributed to lack of gate overlap. Substrate biasing experiments showed that hysteresis effects observed in other devices were the result of a trapping process. Measurement of a.c. parameters with change of frequency showed that transconductance and channel conductance increased with frequency in devices where severe hysteresis was observed and could be attributed to hoping conductivity. Pulse measurements showed that overheating of all or part of the device was in some cases causing failure to saturate.

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